Abstract
1/f noise is a fluctuation in the bulk conductance of semiconductors and metals. This noise could be a fluctuation in the number of the free electrons or in their mobility. Many experimental studies on homogenous layers have proved that the 1/f noise is a fluctuation in the mobility. There is no theoretical model of mobility 1/f noise. The McWhorter model for 1/f noise in MOSTs simply adds generation-recombination spectra from surface states. According to this model, estimates of the noise magnitude give unrealistic values. More important, the McWhorter model is a model on number fluctuations, because GR noise always is a fluctuation in number. There is no experimental proof of number fluctuations in the 1/f noise of MOSTs.
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Hooge, F. (2004). 1/f Noise Sources. In: Sikula, J., Levinshtein, M. (eds) Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices. NATO Science Series II: Mathematics, Physics and Chemistry, vol 151. Springer, Dordrecht. https://doi.org/10.1007/1-4020-2170-4_1
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DOI: https://doi.org/10.1007/1-4020-2170-4_1
Publisher Name: Springer, Dordrecht
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