Collection
Ultra-wide Bandgap Materials, Devices, and Systems
Modern demands for energy-efficient power electronics, secure high-speed communications, and ever-increasing computing power are converging with technology opportunities created by ultrawide-bandgap semiconductors to define new paradigms for a wide range of electronic, optical, sensing, and quantum applications. Rapid progress in the development of ultrawide-bandgap semiconductors such as Al(Ga)N, (AlGa)2O3, diamond, boron nitride, and other new materials have begun to produce encouraging results commensurate with the fundamental advantages that these materials promise. Much remains, however, to be understood in various areas of materials research that encompass bulk and epitaxial crystal growth, defect properties and their impact on device performance, low-dimensional structures, surface and interface physics, optimal strategies for device design and fabrication, and heterogeneous integration with other semiconductors for system-level implementations. This JMR Focus Issue will feature experimental advances and theoretical developments in the field of ultrawide-bandgap semiconductors, devices, and systems.
Contributing papers are solicited in the following areas:
• Bulk crystal synthesis and substrate technologies
• Epitaxy of thin films and nanostructures
• Defect science, engineering, and characterization
• Carrier transport
• Electronic and optoelectronic devices and properties
• Thermal properties and thermal management approaches
• Quantum materials and technologies
Editors
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Man Hoi Wong
Assistant Professor at University of Massachusetts Lowell, USA
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Oliver Bierwagen
Senior Researcher at Paul Drude Institute for Solid State Electronics, Germany
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Robert Kaplar
Electrical Engineer at Sandia National Laboratories, USA
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Hitoshi Umezawa
Senior Researcher at National Institute of Advanced Industrial Science and Technology, Japan
