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Materials Chemistry of Group 13 Nitrides

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Precursor Chemistry of Advanced Materials

Part of the book series: Topics in Organometallic Chemistry ((TOPORGAN,volume 9))

Abstract

The OMVPE process has been used to grow thin films of group 13 nitrides, namely GaN, InN, and AlN. In recent years there has been a great deal of interest in obtaining insights into the gas-phase and surface chemistry involved in this process, as well as in developing various organometallic compounds used as precursors for depositing the nitrides. Among them, single-molecule precursors containing the metal and nitrogen atoms in a single molecule, including amide- or azide-based compounds, are being investigated as an alternative for the alkyls of Ga, Al, and In currently used. From a technological point of view, while there is no real substitute for actual practical application in this field, some of the research work reported over the past decade or so has shown promise. In this article, we discuss the various precursor chemistries that have been investigated in relation to the growth of group 13 nitrides, emphasizing epitaxial films but also giving reference to interesting nanostructured morphologies of these materials, obtained from molecular precursors.

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Authors and Affiliations

  1. Lehrstuhl für Anorganische Chemie II, Ruhr-University, Universitätsstr. 150, 44780, Bochum, Germany

    Anjana Devi, Rochus Schmid & Roland A. Fischer

  2. Department of Chemistry, University of Saskatchewan, 110 Science Place, S7N 5C9, Saskatoon, Saskatchewan, Canada

    Jens Müller

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  1. Anjana Devi
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  2. Rochus Schmid
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  4. Roland A. Fischer
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Devi, A., Schmid, R., Müller, J., Fischer, R.A. Materials Chemistry of Group 13 Nitrides. In: Fischer, R.A. (eds) Precursor Chemistry of Advanced Materials. Topics in Organometallic Chemistry, vol 9. Springer, Berlin, Heidelberg. https://doi.org/10.1007/b136142

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