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Effects of Perturbations

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Optical Absorption of Impurities and Defects in SemiconductingCrystals

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 158))

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Abstract

The frequencies of the spectral lines in crystals can be shifted by perturbations and when levels are degenerate, splitting can occur. Discrete levels of impurities and defects are characterized by their energies and their widths, which determine the positions and the FWHMs of the transitions. The degeneracy of the levels is a less obvious parameter related to their symmetry or to the symmetry of the centres in the crystal, and its consequences can only be derived from optical measurements under external perturbations. It has been shown in Chap. 5 that the multi-valley degeneracy of the CB of indirect-band-gap semiconductors translated into the same degeneracy of the EM donor states and that this degeneracy was partially lifted by valley-orbit coupling. Similarly, due to the structure of the VB maximum, the EM acceptor states also present an intrinsic electronic degeneracy. These degeneracies are the same whatever the atomic structure of the centres because they are due to the band structure of the semiconductor. Another form of degeneracy is due to the atomic symmetry of the centres with equivalent orientations in the crystal, and is logically called orientational degeneracy. An example is the <111> oriented chalcogen substitutional donor pairs in silicon, with a fourfold orientational degeneracy. In the preceding chapters, examples of the splitting of the spectra of impurities in crystals under different perturbations have been given. A more systematic treatment of these perturbations, which can be mechanical, electrical or magnetic, is considered in this chapter.

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  1. Institut des NanoSciences de Paris, Campus Boucicaut rue de Lourmel 140, 75015, Paris, France

    Dr. Bernard Pajot

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  1. Dr. Bernard Pajot
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Correspondence to Bernard Pajot .

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© 2009 Springer-Verlag Berlin Heidelberg

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Pajot, B. (2009). Effects of Perturbations. In: Optical Absorption of Impurities and Defects in SemiconductingCrystals. Springer Series in Solid-State Sciences, vol 158. Springer, Berlin, Heidelberg. https://doi.org/10.1007/b135694_8

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