Abstract
In this monograph, semiconductors and covalent or partially covalent insulators are considered. These materials differ from metals by the existence, at low temperature, of a fully occupied electronic band (the valence band or VB) separated by an energy gap or band gap (Eg) from an empty higher energy band (the conduction band or CB). When Eg reduces to zero, like in mercury telluride, the materials are called semimetals. In metals, the highest occupied band is only partially filled with electrons such that the electrons in this band can be accelerated by an electric field, however small it is.
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References
K. Akimoto, H. Okuyama, M. Ikeda, Y. Mori, Appl. Phys. Lett.60, 91 (1992)
V.I. Anisimov, M.A. Korotin, E.Z. Kurmaev, J. Phys. Condens. Matter2, 3973 (1990)
M. Balkanski, R.F. Wallis,Semiconductor Physics and Applications (Oxford University Press, 2000) p. 101
R. Baron, M.H. Young, J.K. Neeland, O.J. Marsh, Appl. Phys. Lett.30, 594 (1977)
F. Bridges, G. Davies, J. Robertson, A.M. Stoneham, J. Phys.: Cond. Matt.2, 2875 (1990)
G. Busch, Eur. J. Phys.10, 254 (1989)
S. Chandrasekhar, Rev. Mod. Phys.16, 301 (1944)
J. Chevallier, B. Pajot,Interaction of Hydrogen with Impurities and Defects in Semiconductors. Solid State Phenomena 85–86:203–284. (Scitec Publications, Switzerland, 2002)
G. Davies, Phys. Rep.176, 83 (1989)
P.J. Dean, R.A. Faulkner, Phys. Rev.185, 1064 (1969)
P.J. Dean, W.F. Flood, G. Kaminsky, Phys. Rev.163, 721 (1967)
P.J. Dean, J.R. Haynes, W.F. Flood, Phys. Rev.161, 711 (1967)
P.J. Dean, E.G. Schönherr, R.B. Zetterstrom, J. Appl. Phys.41, 3475 (1970)
K.R. Elliot, G.C. Osbourn, D.L. Smith, T.C. McGill, Phys. Rev. B17, 1808 (1978)
H.Y. Fan, M. Becker, Phys. Rev.78, 178 (1950)
U. Fano, Phys. Rev.124, 1866 (1961)
G. Feher, Phys. Rev.114, 1219 (1959)
A. Gaymann, H.P. Geserich, H.v. Löhneysen, Phys. Rev. B52, 16486 (1995)
W.A. Harrison, Pure Appl. Chem.61, 2161 (1989)
J.R. Haynes, Phys. Rev. Lett.4, 361 (1960)
M.O. Henry, E.C. Lightowlers, J. Phys. C10, L601 (1977)
J.C. Irvin, Bell Sys. Tech. J.41, 387 (1962)
D. Israël, F. Callens, P. Clauws, P. Matthys, Solid State Commun.82, 215 (1992)
K. Jain, S. Lai, L.V. Klein, Phys. Rev B13, 5448 (1976)
R.L. Jones, P. Fisher, J. Phys. Chem. Solids26, 1125 (1965)
R. Jones, S. Öberg, F. Berg Rasmussen, B. Bech Nielsen, Phys. Rev. Lett.72, 1882 (1994)
G. Kirczenow, Can. J. Phys.55, 1787 (1977)
C.F. Klingshirn,Semiconductor Optics (Springer, Berlin, 1997)
J. Königsberger, J. Weiss, Ann. Phys., Leipzig35, 1 (1911)
V.M. Korol’, A.V. Zastavnyi, Sov. Phys. Semicond.11, 926 (1977)
M.A. Lampert, Phys. Rev. Lett.1, 450 (1958)
T. Lyman, Phys. Rev.3, 504 (1914)
B. Monemar, U. Lindefelt, W.M. Chen, Physica B + C146, 256 (1987)
T.S. Moss,Optical Properties of Semi-conductors (Butterworths, London, 1961)
N.F. Mott,Metal-Insulators Transitions (Taylor and Francis, London, 1974)
R.C. Newman,Infrared Studies of Crystal Defects (Taylor and Francis, London, 1973)
J.I. Pankove,Optical Processes in Semiconductors (Electronic Engineering Series, ed. by N. Holonyak, Jr., Prentice Hall, Englewood Cliff, NJ, 1971)
J.I. Pankove, D.E. Carlson, J.E. Berkeyheiser, R.O. Wance, Phys. Rev. Lett.51, 2224 (1983)
S.G. Pavlov, R Kh. Zhukavin, E.E. Orlova, V.N. Shastin, A.V. Kirsanov, H.-W. Hübers, K. Auen, H. Riemann, Phys. Rev. Lett.84, 5220 (2000)
C.L. Pekeris, Phys. Rev.126, 1470 (1962)
A.K. Ramdas, S. Rodriguez, Rep. Prog. Phys.44, 1297 (1981)
R. Robertson, J.J. Fox, A.E. Martin, Phil. Trans. Roy. Soc. London Ser. A232, 463 (1934)
C.-T. Sah, J.Y.-C. Sun, J.J.-T. Tzou, Appl. Phys. Lett.43, 204 (1983)
J.H. Scaff, H.C. Theuerer, E.E. Schumacher, J. Metals1, 383 (1949)
W. Shockley,Electron and Holes in Semiconductors (Van Nostrand, Princeton, 1950)
R.A. Smith,Semiconductors, (Cambridge University Press, 1964)
J. -M. Spaeth, inIdentification of Defects in Semiconductors, vol. 51A, ed. by M. Stavola (Academic, San Diego, 1998), p. 45
R.A. Street, W. Senske, Phys. Rev. Lett.37, 1292 (1976)
M.L.W. Thewalt, inExcitons, ed. by M.D. Sturge, E.I. Rashba (North Holland, 1982), p. 393
M.L.W. Thewalt, Solid State Commun.133, 715 (2005)
D.G. Thomas, J.J. Hopfield, Phys. Rev.150, 680 (1966)
W.R. Thurber, R.L. Mattis, Y.M. Liu, Filliben, J. Electrochem. Soc.127, 1807 (1980)
A. Volta, Phil. Trans. R. Soc.72, 237 (1782) (in Italian)Ibid. 72: vii-xxxiii (in English)
G. Watkins, (1998) inIdentification of Defects in Semiconductors, vol. 51A, ed. by M. Stavola (Academic, San Diego, 1998), pp. 1–43
A.M. White, P.J. Dean, K.M. Fairhurst, W. Bardsley, B. Day, J. Phys. C7, L35, (1974)
A.H. Wilson, Proc. R. Soc. A133, 458;Ibid.134, 277 (1931)
G.B. Wright, A. Mooradian, Phys. Rev. Lett.18, 608 (1967)
U.O. Ziemelis, R.R. Parsons, Can. J. Phys.59, 784 (1981)
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Pajot, B. (2009). Introduction. In: Optical Absorption of Impurities and Defects in SemiconductingCrystals. Springer Series in Solid-State Sciences, vol 158. Springer, Berlin, Heidelberg. https://doi.org/10.1007/b135694_1
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