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Rekombinations- und Generationsprozesse in Halbleitern

Chapter
Part of the Advances in Solid State Physics book series (ASSP, volume 5)

Abstract

The first part deals with the physical aspect of recombination and generation processes. These may be classified on one hand according to the energy levels between which electron transitions take place. On the other hand, they may be classified according to the physical mechanism which cause the transition. In this way it is possible to get a systematic survey of the different transition possibilities by arranging them in a two-dimensional table. The second part deals with special effects which are joined with certain transition mechanism, as for instance negative resistances, self-oscillations, opto-electronics.

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Copyright information

© Friedr. Vieweg & Sohn Braunschweig 1966

Authors and Affiliations

  1. 1.Lehrstuhl für Elektronik der TH, 33Braunschweig

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