Abstract
The present state of the theory of electrical conduction in metals and semiconductors is described in two parts. Part I is devoted to the elementary transport theory based on the validity of the relaxation time approximation. There are two reasons for repeated treatment of this well-known subject: 1. it seems to be necessary to establish the assumptions under which the frequently used relations of the elementary transport theory are valid, and 2. it is shown that this theory cannot explain the galvanomagnetic effects in most cases. The last mentioned circumstance is caused by the fact that nearly all physical properties depend on the orientation to crystal axes due to the influence of the crystal potential. As it will be demonstrated in I. 6 especially the requirements of validity of the relaxation time approximation —i. e. isotropic scattering mechanism and spherical equi-energy surfaces—are not fulfilled under these conditions. In part II is described how the galvanomagnetic magnitudes may be calculated, if the scattering mechanism of the charge carriers is anisotropic and if the energy band structure is not spherical. The theory is developed for low and high magnetic fields as well. These considerations are based on the assumption that the Boltzmann equation holds. This formulation of the problem requires more detailed information on the scattering mechanism than the elementary transport theory. Problems are mentioned which arise in this connection.
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Bross, H. (1966). Zur Theorie der elektrischen Leitungserscheinungen in Halbleitern und Metallen. In: Sauter, F. (eds) Festkörperprobleme V. Advances in Solid State Physics, vol 5. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0119273
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DOI: https://doi.org/10.1007/BFb0119273
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