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Der p-n-Photoeffekt

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Halbleiterprobleme

Part of the book series: Advances in Solid State Physics ((ASSP,volume HP3))

Abstract

A theoretical treatment is given along the lines of Shockley's p-n-theory for a realistic model of a p-n-photocell. The photocurrent and the photovoltage are correlated to a) the optical and electrical bulk properties of the semiconductor in the p- and the n-region, b) the distance of the p-n-junction from the semiconductor surface, and c) the surface recombination. Thus, rules are obtained for the optimal design of a photo-cell matched to the light of a given spectral distribution, for example sunlight. Experimental results are pointed out.

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Authors and Affiliations

  1. Wernerwerk für Bauelemente, Siemens & Halske AG., München

    R. Wiesner

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  1. R. Wiesner
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© 1956 Friedr. Vieweg & Sohn

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Wiesner, R. (1956). Der p-n-Photoeffekt. In: Halbleiterprobleme. Advances in Solid State Physics, vol HP3. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0116505

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  • DOI: https://doi.org/10.1007/BFb0116505

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-75300-1

  • Online ISBN: 978-3-540-75302-5

  • eBook Packages: Springer Book Archive

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