Abstract
Following an introductory overview of the intrinsic point defects in semiconductors the paper concentrates on Si and Ge, in particular on the exciting recent developments concerning Si self-interstitials. Proceedings from low to high temperatures the discussion covers the following subjects: the low-temperature mobility of point defects induced by particle irradiation or other techniques generating free charge carriers; the geometrical configurations, electric charge states, and thermally activated migration of self-interstitials and vacancies at intermediate temperatures; the predominance of vacancies in Ge and self-interstitials in Si under high-temperature equilibrium conditions. The remainder of the paper deals with the transition of the Si self-interstitials from dumbbell to spread-out configurations between intermediate and high temperatures and—so far as to bring out the relationship to self-interstitials in Si—with concentration-enhanced-diffusion phenomena and with the diffusion of Au in Si.
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Dedicated to Professor Dr. Ing. Dr. rer. nat. h.c. Ulrich Dehlinger on the occasion of his 80th birthday on July 6, 1981.
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© 1981 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Frank, W. (1981). Self-interstitials and vacancies in elemental semiconductors between absolute zero and the temperature of melting. In: Treusch, J. (eds) Festkörperprobleme 21. Advances in Solid State Physics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108606
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