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GaSb/AlGaSb VCSEL structures and microcavities in the 1.5 μm wavelength range

  • J. Koeth
  • R. Dietrich
  • J. P. Reithmaier
  • A. Forchel
Light Emitting Devices
Part of the Advances in Solid State Physics book series (ASSP, volume 40)

Abstract

Vertical cavity surface emitting laser structures for 1.5 μm wavelength applications were realized by growing AlSb/AlGaSb Bragg mirrors on GaAs substrates with solid source molecular beam epitaxy. Due to the high refractive index contrast between GaSb and AlSb high quality resonators can be made by only 15 layer pairs for each Bragg mirror. Laser operation could be demonstrated by optical pumping with threshold excitation densities of about 500 W/cm2. In laterally deeply etched microcavities with diameters of 5 μm a clear discretization of the optical modes was observed. The lateral confinement effects are compared with results of AlAs/GaAs microcavities designed for 0.9 μm emission wavelength. Due to the longer wavelength a stronger confinement effect can be achieved in AlSb/AlGaSb microcavities for the same lateral dimensions.

Keywords

GaSb Substrate Bragg Mirror Vertical Cavity Surface Layer Pair Solid Source Molecular Beam Epitaxy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Friedr. Vieweg & Sohn Verlagsgesellschaft mbH 2000

Authors and Affiliations

  • J. Koeth
    • 1
  • R. Dietrich
    • 1
  • J. P. Reithmaier
    • 1
  • A. Forchel
    • 1
  1. 1.Technische PhysikUniversität WürzburgWürzburgGermany

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