GaSb/AlGaSb VCSEL structures and microcavities in the 1.5 μm wavelength range
Vertical cavity surface emitting laser structures for 1.5 μm wavelength applications were realized by growing AlSb/AlGaSb Bragg mirrors on GaAs substrates with solid source molecular beam epitaxy. Due to the high refractive index contrast between GaSb and AlSb high quality resonators can be made by only 15 layer pairs for each Bragg mirror. Laser operation could be demonstrated by optical pumping with threshold excitation densities of about 500 W/cm2. In laterally deeply etched microcavities with diameters of 5 μm a clear discretization of the optical modes was observed. The lateral confinement effects are compared with results of AlAs/GaAs microcavities designed for 0.9 μm emission wavelength. Due to the longer wavelength a stronger confinement effect can be achieved in AlSb/AlGaSb microcavities for the same lateral dimensions.
KeywordsGaSb Substrate Bragg Mirror Vertical Cavity Surface Layer Pair Solid Source Molecular Beam Epitaxy
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