Abstract
Luminescence experiments provide a unique powerful and nondestructive approach for the ex situ investigation of semiconductor heterointerfaces. Detailed analysis of the spontaneous radiative recombination in quantum well (QW) structures, i.e. luminescence lineshape analysis, and determination of excitation density and temperature dependence enable quantitative characterization of the structural, chemical and electronic properties of the interfaces on atomic scale. A novel experimental approach, Cathodoluminescence Wavelength Imaging, which involves recording of a complete CL spectrum at every scanning position, yields direct 3D images of the atomic scale morphology of the interfaces as sensed by the QW exciton: similar to the tip of a scanning tunnelling microscope, the QW exciton samples the roughness induced local fluctuations of the QW thickness L z and performs a transformation of this structural information L z (x, y) into a spectral one, the lateral variation of the emission wavelength λ(x, y). By combining the different luminescence techniques interface roughness can be investigated within a space frequency range from (1mm)−1 up to the (nm)−1 regime.
Preview
Unable to display preview. Download preview PDF.
References
R. Dingle, A.C. Gossard, and W. Wiegmann, Phys. Rev. Lett. 21, 1327 (1975)
R. Dingle, in: Festkörperprobleme/Advances in Solid State Physics XV, ed. by H.J. Queisser (Pergamon, Vieweg, Braunschweig, 1975), p. 21
C. Weisbuch, in: Application of Multiquantum Wells, Selective Doping and Superlattices, R. Dingle ed. Vol. 24 in: Semiconductors and Semimetals eds. R.K. Willardson and A.C. Beer (Academic, San Diego, 1987)
N.T. Linh, in: Festkörperprobleme/Advances in Solid State Physics XXIII, ed. by P. Grosse (Pergamon, Vieweg, Braunschweig 1983), p. 227
R. Dingle (ed.), Application of Multiquantum Wells, Selective Doping ans Superlattices, Vol. 24, in Semiconductor and Semimetals, ed. by R.K. Willardson and A.C. Beer (Academic, San Diego, 1987)
J.H. Neave, B.A. Joyce, P.J. Dobson, and N. Norton, Appl. Phys. A 341, 1 (1983)
T. Sakamoto, H. Funabashi, K. Ohta, T. Nakagawa, N.J. Kowai, and Y. Bando, Superl. and Microstr. 1, 347 (1985)
B.F. Lewis, F.J. Grunthaner, A. Madhukar, T.C. Lee, and R. Fernandez, J. Vac. Sci. Technol. B 3, 1317 (1985) and P. Chen, J.Y. Kim, A. Madhukar, and N.M. Cho, J. Vac. Sci. Technol. B 4, 890 (1986)
A. Ourmazd, W.T. Tsang, J.A. Rentschler, and D.W. Taylor, Appl. Phys. Lett. 50, 1417 (1987)
T. Nakamura, M. Ikeda, S. Muto, and I. Umedu, Appl. Phys. Lett. 55, 379 (1988)
A. Ourmazd, D.W. Taylor, J. Cunningham, and C.W. Tu, Phys. Rev. Lett. 62, 933 (1989)
D. Bimberg, D. Oertel, R. Hull, G.A. Reid, and K.W. Carey, J. Appl. Phys. 65, 2688 (1989)
A. Steckenborn, H. Münzel, and D. Bimberg, J. Luminescence 24/25, 351 (1981), and Inst. Phys. Conf. Ser. 60, 185 (1981)
L.J. Sham, Superlattices and Microstructures 5, 335 (1989)
G. Bastard, and J.A. Brum, IEEE J. Quantum Electron. QE-22, 1625 (1986)
D. Bimberg, D. Mars, J.N. Miller, R. Bauer, D. Oertel, and J. Christen, Superlattices and Microstructures 3, 79 (1987)
M. Sugawara, T. Fujii, S. Yamazaki, and K. Nakajiama, Appl. Phys. Lett. 54, 1353 (1989)
J. Christen, D. Bimberg, A. Steckenborn, and G. Weimann, Appl. Phys. Lett. 44, 84 (1984), and Superlattices and Microstructures 2, 251 (1986)
D. Bimberg, J. Christen, A. Steckenborn, G. Weimann, and W. Schlapp, J. Luminescence. 30, 562 (1985)
D. Chemla, and D.A.B. Miller, J. Opt. Soc. Am. B 2, 1155 (1985)
J. Christen, and D. Bimberg, Surf. Sci. 174, 261 (1986)
D. Bimberg, J. Christen, A. Werner, M. Kunst, G. Weimann, and W. Schlapp, Appl. Phys. Lett. 49, 76 (1986)
E.H. Böttcher, K. Ketterer, D. Bimberg, G. Weimann, and W. Schlapp, Appl. Phys. Lett. 50, 1074 (1987)
D.C. Bertolet, J.K. Hsu, K.M. Lau, E.S. Koteles, and D. Owens, J. Appl. Phys. 64, 6562 (1988)
U. Cebulla, G. Bacher, A. Forchel, G. Mayer, and W.T. Tsang, Phys. Rev. B 39, 6257 (1989)
J.O. Dimmock, in: Semiconductors and Semimetals, ed. by R.K. Willardson and A.C. Beer, Vol. 3, (Academic, New York, 1967), p. 259
M. Grundmann, and D. Bimberg, Phys. Rev. B 38, 13486 (1988)
D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D.E. Mars, and J.N. Miller, J. Vac. Sci. Technol. B 5, 1191 (1987)
J. Singh, K.K. Bajaj, and S. Chaudhuri, Appl. Phys. Lett. 44, 805 (1984)
J. Singh, and K.K. Bajaj, J. Appl. Phys. 57, 5433 (1985)
J. Christen, and D. Bimberg, Phys. Rev. B 41, 15th April (1990), in print
F. Stern, in: Solid State Physics, ed. by F. Seitz and, D. Turnbull, (Academic, New York, 1963), Vol. 15, 299
G. Lasher, and F. Stern, Phys. Rev. 133, A533 (1964)
R.J. Elliott, Phys. Rev. 108, 1384 (1957)
M. Shinada, and S. Sugano, J. Phys. Soc. Japan 21, 1936 (1966)
D. Bimberg, D. Mars, J.N. Miller, R. Bauer, and D. Oertel, J. Vac. Sci. Technol. B 4, 1014 (1986)
H. Sakaki, M. Tanaka, and J. Yoshino, Jpn. J. Appl. Phys. 24, L417 (1985)
T. Fukunaga, K.L.I. Kobayashi, and H. Nakashima, Jpn. J. Appl. Phys. 24, L510 (1985), and Surf. Sci. 174, 71 (1986)
M. Tanaka, H. Sakaki, and J. Yoshino, Jpn. J. Appl. Phys. 25, L155 (1986)
M. Tanaka, H. Sakaki, J. Yoshino, and T. Furuta, Surf. Sci. 174, 65 (1986)
T. Fukunaga, and H. Nakashima, Jpn. J. Appl. Phys. 25, L856 (1986)
M. Tanaka, and H. Sakaki, J. Cryst. Growth 81, 153 (1987)
D. Bimberg, H. Münzel, A. Steckenborn, and J. Christen Phys. Rev. B 31, 7788 (1985)
D. Bimberg, J. Christen, A. Steckenborn, G. Weimann, and W. Schlapp J. of Luminescence 30, 562 (1989)
J. Christen, Thesis, Technische Universität Berlin (1988)
J. Christen, and D. Bimberg, Oyo Buturi (Japan) 57, 69 (1988)
J. Christen, and D. Bimberg, Revue de Physique Appliqué C 6, 85 (1989)
J. Christen, M. Grundmann, and D. Bimberg, Applied Surface Science 41/42, 329 (1989)
A. Steckenborn, H. Münzel, and D. Bimberg, Betr. Elektronenmikroskop. Direktabb. Oberfl. 13, 157 (1980)
H. Münzel, D. Bimberg, and A. Steckenborn, Physica (Utrecht) 115 B+118 B 214 (1983)
R.V. Martinelli, and C.C. Wang, J. Appl. Phys. 44, 3350 (1973)
R. Köhrbrück, S. Munnix, D. Bimberg, D.E. Mars, and J.N. Miller, J. Vac. Sc. Technol. B, July/August 1990, in print
K. Wada, A. Kozen, H. Fushimi, and N. Iwone, Jap. J. Appl. Phys. 27, L1952 (1988)
J. Christen, D. Bimberg, T. Fukunaka, and H. Nakashima, Proc. ESSDERC 16, Cambridge 1986, ed. by D.F. Moore
D. Bimberg, J. Christen, T. Fukunaga, H. Nakashima, D.E. Mars, and J.N. Miller, Superlatt. & Microstruct. 4, 257 (1988)
P.M. Petroff, J. Cibert, A.C. Gossard, G.J. Dolan, and L.W. Tu, J. Vac. Sci. Technol. B 5, 1204 (1987)
K. Wada, A. Kozen, H. Fushini, and N. Inone, J. Crystal Growth 93, 935 (1988)
K. Wada, A. Kozen, Y. Hasuni, and J. Temmyo, Appl. Phys. Lett. 54, 436 (1989)
C.A. Warwick, W.Y. Jan, A. Ourmazd, and T.D. Harris, Appl. Phys. Lett., in print
J. Christen, D. Bimberg, A. Ourmazd, and C. Warwick, Appl. Phys. Lett., to be published
M.A. Herman, D. Bimberg, and J. Christen, J. Appl. Phys., in print
Author information
Authors and Affiliations
Editor information
Rights and permissions
Copyright information
© 1990 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
About this chapter
Cite this chapter
Christen, J. (1990). Characterization of semiconductor interfaces with atomic scale resolution by luminescence. In: Rössler, U. (eds) Festkörperprobleme 30. Advances in Solid State Physics, vol 30. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108291
Download citation
DOI: https://doi.org/10.1007/BFb0108291
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-528-08038-9
Online ISBN: 978-3-540-75346-9
eBook Packages: Springer Book Archive