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Silicon carbide (SiC)—Recent results in physics and in technology

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Festkörperprobleme 30

Part of the book series: Advances in Solid State Physics ((ASSP,volume 30))

Abstract

Silicon carbide provides promising physical properties which urge this wide band gap semiconductor to be reinspected as material for a possible use in highpower, high-speed, high-temperature, and high-radiation resistant devices. This demand for a second look is supported by progress in the understanding of the physical properties, by the recent improvement of the crystalline quality of bulk material and of epitaxially-grown films, and by the development of suitable process technologies necessary for the device fabrication. A brief review of recent results on the topics mentioned above is given in the present paper.

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  1. Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstr. 7, D-8520, Erlangen, Federal Republic of Germany

    Gerhard Pensl & Reinhard Helbig

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  1. Gerhard Pensl
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Pensl, G., Helbig, R. (1990). Silicon carbide (SiC)—Recent results in physics and in technology. In: Rössler, U. (eds) Festkörperprobleme 30. Advances in Solid State Physics, vol 30. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108286

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