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The metal-insulator transition in Si:P

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Festkörperprobleme 30

Part of the book series: Advances in Solid State Physics ((ASSP,volume 30))

Abstract

Recent experiments on the metal-insulator (MI) transition in Si:P are reviewed. This transition occurs as a function of phosphorus concentration N at N c ≈3.5·1018 cm−3. It has become a prototype MI transition bearing features both of an Anderson transition due to the statistical distribution of donor atoms and of a Mott transition due to electron-electron interactions. In the metallic regime above N c the temperature dependence of the electrical conductivity ε at low temperatures is governed by localization and electron-interaction effects. Upon approaching N c , ε goes to zero as(N−N c )v with v ≈ 0.5 for uncompensated and v ≈ 1 for compensated Si:P. This difference may lie in the importance of electron-electron interactions in the former. In the vicinity of the MI transition both delocalized and localized electrons are simultaneously present as evidenced by a large number of different experiments such as magnetic susceptibility, specific heat and magnetic resonance. In particular, the magnetic field dependence of the specific heat allows a detailed analysis of the contributions of localized and itinerant electrons. A field-induced shift towards localization is clearly observed. Finally, the delocalized electrons exhibit a well-defined plasma edge in the far-infrared reflectivity.

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  1. Physikalisches Institut der Universität Karlsruhe, Engesserstr. 7, D-7500, Karlsruhe, Federal Republic of Germany

    Hilbert v. Löhneysen

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  1. Hilbert v. Löhneysen
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Ulrich Rössler

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© 1990 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Löhneysen, H.v. (1990). The metal-insulator transition in Si:P. In: Rössler, U. (eds) Festkörperprobleme 30. Advances in Solid State Physics, vol 30. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108284

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  • DOI: https://doi.org/10.1007/BFb0108284

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-528-08038-9

  • Online ISBN: 978-3-540-75346-9

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