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Beryllium-containing II–VI compounds: Properties and applications

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Bibliography

  1. For a comprehensive review on conventional II–VI matierials see e.g. II–VI semiconductors, R.L. Gunshor and A. Nurmikko (Ed.), Willardson Beer 1997.

    Google Scholar 

  2. S. Taniguchi, T. Hino, S. Itoh, K. Nakano, N. Nakayama, A. Ishibashi, M. Ikeda, Electronic Letters 32 (1996) 552.

    Article  Google Scholar 

  3. M.A. Haase, J. Qui, J.M. dePuydt, H. Cheng, Appl. Phys. Lett. 59 (1991) 1272.

    Article  ADS  Google Scholar 

  4. R.M. Park, M.B. Troffer, C.M. Rouleau, J.M. dePuydt, M.A. Haase, Appl. Phys. Lett. 57 (1990) 2127.

    Article  ADS  Google Scholar 

  5. K. Ohkawa, T. Karasawa, T. Mitsuyu, Jpn. J. Appl. Phys. 30 (1991) L152.

    Article  ADS  Google Scholar 

  6. H.-J. Lugauer, Th. Litz, F. Fischer, A. Waag, T. Gerhard, U. Zehnder, W. Ossau, G. Landwehr Int. Conf. on Molecular Beam Epitaxy, Proceedings to be published in Journal of Crystal Growth, E. Tournier et al, European Materials Research Society Meeting, Strasbourg, EMRS 1996, Proceedings

    Google Scholar 

  7. H. Okuyama, T. Miyajima, Y. Morinaga, F. Hiei, M. Ozawa, K. Akimoto Elec. Lett. 28 (1992) 1798.

    Article  ADS  Google Scholar 

  8. Y. Fan, J. Han, L. He, J. Saraie, R.L. Gunshor, M. Hagerott, H. Jeon, V. Nurmikko, G.C. Hua, N. Otsuka, Appl. Phys. Lett. 61 (1992) 3160; A Ishibashi, Y. Mori, J. Cryst. Growth 138 (1994) 677.

    Article  ADS  Google Scholar 

  9. J. Petruzzello, T. Marshall, S. Herko, K. W. Haberem, M. Buijs, K. K. Law, T. J. Miller, G. M. Haugen, Int. Symp. on Blue Laser and Light Emitting Diodes, Chiba, Japan 1996, Proceedings, p. 230

    Google Scholar 

  10. K. W. Haberern et al., SPIE, Physics and Simulation of Optoelectronic Devices, San Jose 1997, proceedings.

    Google Scholar 

  11. C. Verie, in Semiconductor Heteroepitaxy, B. Gil and R.-L. Aulombard (Ed.), World Scientific (1995) p. 73

    Google Scholar 

  12. W. Harrison, in Electronic Structure and the Properties of Solids, Dover Publications, p. 176.

    Google Scholar 

  13. M. Stutzmann, priv. comm. as has been pointed out in earlier reports, a band gap of 5.0 eV was the lower estimate due to the limitation of the equipment used then.

    Google Scholar 

  14. M. Ringle, D. C. Grillo, J. Han, R. L. Gunshor, G. C. Hua, A. V. Nurmikko Inst. Phys. Conf. Series 141 (1995) 513 IOP Publishing

    Google Scholar 

  15. A. Waag, F. Fischer, H.-J. Lugauer, T. Litz, T. Gerhardt, J. Nürnberger, U. Lunz, U. Zehnder, W. Ossau, G. Landwehr, EMRS spring meeting 1996, Strasbourg (invited), Symposium C, to be published.

    Google Scholar 

  16. B. Roos, C. J. Santana, C. R. Abernathy, K. S. Jones, Thin Films: Stresses and Mechanical Properties, ed. by W. W. Gerberich et al. Pittsburgh, PA, MRS Symp. Proc. 436 (1996)

    Google Scholar 

  17. J. Han, R.-L. Gunshor, A. Nurmikko, phys. stat. sol. (b) 187 (1995) 285.

    Article  ADS  Google Scholar 

  18. R. G. Dandrea, C. B. Duke, Appl. Phys. Lett. 64 (1994) 2145.

    Article  ADS  Google Scholar 

  19. Th. Behr, T. Litz, A. Waag, G. Landwehr, J. Cryst. Growth 156 (1995) 206.

    Article  ADS  Google Scholar 

  20. Th. Baron, thesis, University of Grenoble 1996.

    Google Scholar 

  21. P. M. Mensz, Appl. Phys. Lett. 64 (1994) 2148.

    Article  ADS  Google Scholar 

  22. M. Nagelstraßer, H. Dröge, H.-P. Steinrück, F. Fischer, T. Litz, A. Waag, G. Landwehr BESSY Jahresbericht 1996.

    Google Scholar 

  23. A. Franciosi, L. Vanzetti, L. Sorba, A. Bonnani, R. Cingolani, M. Lomascolo, D. Greco, Mater. Science Forum vol. 182–184 (1995) 17.

    Article  Google Scholar 

  24. W. Faschinger, S. Ferreira, H. Sitter, R. Krump, G. Brunthaler, Materials Science Forum Vols. 182–184 (1995) 29.

    Article  Google Scholar 

  25. R. Krump, S. O. Ferreira, W. Faschinger, G. Brunthaler, H. Sitter, Mat. Science Forum 182–184 (1995) 349.

    Article  Google Scholar 

  26. W. Spahn, H. R. Reß, C. Fischer, R. Ebel, W. Faschinger, M. Ehinger, G. Landwehr, Physics and Simulation of Optoelectronic Devices IV, SPIE 1996.

    Google Scholar 

  27. J. Geurts et al., Int. Conf. on the Physics of Semiconductors, Berlin 1996

    Google Scholar 

  28. L. L. Chang, L. Esaki, R. Tsu, Appl. Phys. Lett. 24 (1974) 593.

    Article  ADS  Google Scholar 

  29. G. Reuscher, M. Keim, F. Fischer, A. Waag, G. Landwehr, Phys. Rev. B53 (1996), 16414.

    Article  ADS  Google Scholar 

  30. U. Lunz, M. Keim, G. Reuscher, F. Fischer, K. Schüll, A. Waag, G. Landwehr, J. Appl. Physics 80 (1996), 6329.

    Article  ADS  Google Scholar 

  31. S. Guha, J. M. dePuydt, M. A. Haase, J. Qiu, H. Cheng, Appl. Phys. Lett. 63 (1993) 3107.

    Article  ADS  Google Scholar 

  32. A. Ishibashi, M. Ukito, S. Tomiya, Int. Conf. Physics of Semiconductors, Berlin 1996, Proceedings

    Google Scholar 

  33. M. A. Haase et al (3M), announced at the SPIE meeting San Jose 1997.

    Google Scholar 

  34. V. Pelligrini, R. Atanasov, A. Tredicucci, F. Beltram, C. Amzulini, L. Sorba, L. Vanzetti, A. Franciosi, Phys. Rev. B 51 (1995) 5171

    Article  ADS  Google Scholar 

  35. J. Ding, N. Pelekanos, A. V. Nurmikko, H. Luo, N. Samarth, J. K. Furdyna, Appl. Phys. Lett. 57, 2885 (1990).

    Article  ADS  Google Scholar 

  36. Th. Walter, A. Rosenauer, D. Gerhtsen, F. Fischer, R. Gall, Th. Litz, A. Waag, G. Landwehr, Microscopy of Semiconducting Materials, Oxford 1997, Proceedings.

    Google Scholar 

  37. B. Goldenberg, J. D. Zook, R. J. Ulmer, Topical workshop on III–V nitrides, Nagoya, Japan 1995, proceedings.

    Google Scholar 

  38. X. Zhou, Sh. Jiang, W. P. Kirk, 9th Int. Conf. MBE, Malibu 1996, proceedings.

    Google Scholar 

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Reinhard Helbig

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© 1998 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Waag, A. et al. (1998). Beryllium-containing II–VI compounds: Properties and applications. In: Helbig, R. (eds) Advances in Solid State Physics 37. Advances in Solid State Physics, vol 37. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108238

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  • DOI: https://doi.org/10.1007/BFb0108238

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