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Charge-induced structural relaxation in hydrogenated amorphous silicon

Chapter
Part of the Advances in Solid State Physics book series (ASSP, volume 28)

Abstract

Microscopic aspects of structural relaxation in hydrogenated amorphous silicon are reviewed with special emphasis on the reversible dangling bond creation caused by doping, charge-injection, or illumination (Staebler-Wronski effect). It is argued that breaking of weak Si−Si bonds caused by charge-trapping and nonradiative recombination provides a common explanation for metastable defect formation in amorphous silicon. In addition, the influence of hydrogen on metastable bonding configurations as well as hydrogen diffusion in amorphous silicon are discussed.

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Copyright information

© Friedr. Vieweg & Sohn Verlagsgesellschaft mbH 1988

Authors and Affiliations

  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Federal Republic of Germany

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