Power thyristors using IC-technology

Part of the Advances in Solid State Physics book series (ASSP, volume 26)


Gate-Turn-Off-thyristors are produced using a MOS-technology, so-called MOS-GTO's. The blocking voltage and forward characteristics of these devices correspond to those of conventional elements of the same axial structure. The new devices, however, can be triggered on and off by a voltage signal to the high impedance MOS-input. A narrow cellular structure of cathode emitter and emitter-shorts guarantees a uniform injection or extraction of carriers across the total area of the emitter junction and promises to remove the dV/dt- and the dI/dt-limitations of conventional thyristors.


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Copyright information

© Friedr. Vieweg & Sohn Verlagsgesellschaft mbH 1986

Authors and Affiliations

  1. 1.Corporate Research and DevelopmentSiemens AGMünchenFederal Republic of Germany

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