Advertisement

Power thyristors using IC-technology

Chapter
Part of the Advances in Solid State Physics book series (ASSP, volume 26)

Abstract

Gate-Turn-Off-thyristors are produced using a MOS-technology, so-called MOS-GTO's. The blocking voltage and forward characteristics of these devices correspond to those of conventional elements of the same axial structure. The new devices, however, can be triggered on and off by a voltage signal to the high impedance MOS-input. A narrow cellular structure of cathode emitter and emitter-shorts guarantees a uniform injection or extraction of carriers across the total area of the emitter junction and promises to remove the dV/dt- and the dI/dt-limitations of conventional thyristors.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    W. Gerlach, Thyristoren, Halbleiter-Elektronik 12, ed. by W. Heywang and R. Müller (Springer, Berlin 1979), p. 293Google Scholar
  2. [2]
    C. T. Sah, Surface-Potential Controlled Semiconductor Device, United States Patent Office 3.243, 669 (1966, filed 1962)Google Scholar
  3. [3]
    P. Svedberg, German Patent DE 2625917 (1976)Google Scholar
  4. [4]
    C. A. T. Salama, IEDM (1976) Washington, p. 412Google Scholar
  5. [5]
    T. Okabe, I. Yoshida, S. Ochi, and M. Nagata, IEDM (1976) Washington, p. 416Google Scholar
  6. [6]
    H. Patalong, German patent DE 2945324 (1979)Google Scholar
  7. [7]
    V. A. K. Temple, MOS Controlled Thyristors, IEDM (1984), San Francisco, p. 282Google Scholar
  8. [8]
    M. Stoisiek and H. Patalong, Power Devices with MOS-Controlled Emitter Shorts, Siemens Forsch. u. Entwickl.-Ber. Bd. 14 (1985) Nr. 2, p. 45Google Scholar
  9. [9]
    M. Stoisiek and H. Strack, MOS-GTO a Turn-Off Thyristor with MOS-Controlled Emitter Shorts, IEDM (1985) Washington, p. 158Google Scholar
  10. [10]
    M. Kurata, M. Azuma, H. Ohashi, K. Takigami, A. Nakagawa, and K. Kishi, Gate Turn-Off Thyristors, in: Semiconductor Devices for Power Conditioning, ed. by R. Sittig and R. Roggwiller (Plenum Press, New York 1982), p. 91Google Scholar
  11. [11]
    R. Stengl and U. Gösele, Variation of Lateral Doping—a New Concept to Avoid High Voltage Breakdown of Planar Junctions, IEDM (1985), Washington, p. 154Google Scholar
  12. [12]
    A. F. Franz and G. A. Franz, BAMBI—A Design Model for Power MOSFET's, IEEE CAD-4, (1985) p. 177Google Scholar

Copyright information

© Friedr. Vieweg & Sohn Verlagsgesellschaft mbH 1986

Authors and Affiliations

  1. 1.Corporate Research and DevelopmentSiemens AGMünchenFederal Republic of Germany

Personalised recommendations