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Semiconductor physics in ultra-pure germanium

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Festkörperprobleme 26

Part of the book series: Advances in Solid State Physics ((ASSP,volume 26))

Abstract

The discovery of a large number of shallow and deep levels in ultra-pure germanium has led to a renewed interest in this elemental semiconductor. The new levels are created by complexes typically consisting of one substitutional impurity such as silicon, oxygen, carbon, beryllium, zinc, copper, etc. and one or more interstitial impurities such as hydrogen or lithium. The experimental techniques and results which have been used to determine the structure and composition of these centers are reviewed. One of the most intriguing features of the acceptor centers, an electronic ground-state which does not split under uniaxial compression, has been explained with a tunneling impurity model.

Double acceptors, helium analoga in semiconductors, have been investigated recently with IR spectra and photoluminescence. The new results indicate that contrary to earlier assumptions all double acceptors exhibit split ground-states, a consequence of the hole-hole interaction.

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Authors and Affiliations

  1. Max-Planck-Institute for Solid State Research, D-7000, Stuttgart 80, Federal Republic of Germany

    Eugene E. Haller

  2. University of California, 94720, Berkeley, CA, USA

    Eugene E. Haller

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  1. Eugene E. Haller
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P. Grosse

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© 1986 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Haller, E.E. (1986). Semiconductor physics in ultra-pure germanium. In: Grosse, P. (eds) Festkörperprobleme 26. Advances in Solid State Physics, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107798

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  • DOI: https://doi.org/10.1007/BFb0107798

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