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Light scattering in novel layered semiconductor structures

Chapter
Part of the Advances in Solid State Physics book series (ASSP, volume 26)

Abstract

Electronic and phonon Raman scattering is used to study novel layered semiconductor structures. Electronic excitations are discussed in GaAs quantum-well structures. Allowed phonon scattering leads to information on built-in strains in SiGe overlayers and Si−SiGe superlattices. Periodic multilayer structures show characteristic zone folding effects of the acoustic phonon branches. The formation of semiconductor heterostructures is studied with electric field induced LO-phonon scattering.

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Copyright information

© Friedr. Vieweg & Sohn Verlagsgesellschaft mbH 1986

Authors and Affiliations

  1. 1.Physik-Department E 16Technische Universität MünchenGarchingFederal Republic of Germany

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