Light scattering in novel layered semiconductor structures
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Electronic and phonon Raman scattering is used to study novel layered semiconductor structures. Electronic excitations are discussed in GaAs quantum-well structures. Allowed phonon scattering leads to information on built-in strains in SiGe overlayers and Si−SiGe superlattices. Periodic multilayer structures show characteristic zone folding effects of the acoustic phonon branches. The formation of semiconductor heterostructures is studied with electric field induced LO-phonon scattering.
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- G. Abstreiter, M. Cardona, and A. Pinczuk, in: Light Scattering in Solids IV (Topics in Applied Physics), ed. by M. Cardona and G. Güntherodt (Springer, Berlin, Heidelberg, New York, 1984), Vol. 54, p. 5Google Scholar
- E. Burstein, A. Pinczuk, and S. Buchner in: Physics of Semiconductors 1978, ed. by B. L. H. Wilson, London, The Institute of Physics 1979, p. 1231Google Scholar
- G. Fasol, N. Mestres, H. P. Hughes, A. Fischer, and K. Ploog, submitted for publicationGoogle Scholar
- A. Pinczuk, M. G. Lamont, and A. C. Gossard, submitted for publicationGoogle Scholar
- G. Weimann, this volumeGoogle Scholar
- M. A. Renucci, J. B. Renucci, and M. Cardona, Proc. of the 2nd Conf. on Light Scattering in Solids, ed. by M. Balkanski (Flammarion, Paris, 1971), p. 326Google Scholar
- H. Brugger, K. Eberl, and G. Abstreiter, to be publishedGoogle Scholar
- H. Brugger and G. Abstreiter, to be publishedGoogle Scholar