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Light scattering in novel layered semiconductor structures

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Festkörperprobleme 26

Part of the book series: Advances in Solid State Physics ((ASSP,volume 26))

Abstract

Electronic and phonon Raman scattering is used to study novel layered semiconductor structures. Electronic excitations are discussed in GaAs quantum-well structures. Allowed phonon scattering leads to information on built-in strains in SiGe overlayers and Si−SiGe superlattices. Periodic multilayer structures show characteristic zone folding effects of the acoustic phonon branches. The formation of semiconductor heterostructures is studied with electric field induced LO-phonon scattering.

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Authors and Affiliations

  1. Physik-Department E 16, Technische Universität München, D-8046, Garching, Federal Republic of Germany

    Gerhard Abstreiter

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  1. Gerhard Abstreiter
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P. Grosse

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© 1986 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Abstreiter, G. (1986). Light scattering in novel layered semiconductor structures. In: Grosse, P. (eds) Festkörperprobleme 26. Advances in Solid State Physics, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107790

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  • DOI: https://doi.org/10.1007/BFb0107790

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-528-08032-7

  • Online ISBN: 978-3-540-75359-9

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