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Localized vibrational modes in semiconductors: Infrared absorption

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Book cover Festkörperprobleme 11

Part of the book series: Advances in Solid State Physics ((ASSP,volume 11))

Zusammenfassung

Die folgende Arbeit enthält einen Überblick über die theoretischen und experimentellen Voraussetzungen für die Beobachtung hochfrequenter, lokalisierter Schwingungsmoden von Störstellen in einem Kristallgitter. Die Diskussion ist beschränkt und die Infrarot-Absorption in Halbleitersystemen, und für das Beispiel GaAs:Si wird ein Überblick über die experimentellen Ergebnisse gegeben. Die Messungen liefern Informationen über vier verschiedene Punktdefekte und ihre Symmetrien. Es ergibt sich ein direkter Nachweis für “ion-pairing” und “impurity site transfer”. Das Verfahren wird angewendet, um den Einfluß anderer Fremdatome auf die Verteilung der Si-Atome auf die Gitterplätze zu studieren und um die Verteilung der Si-Atome in GaAs, das aus einer Ga-Lösung gewonnen wurde, zu untersuchen. Andere experimentelle Ergebnisse betreffen neuere Beobachtungen der Absorption durch die lokalisierte Schwingungsmode von Si in GeSi-Legierungen mit Ge-Überschuß, Messungen der Störstellen-Segregations-Koeffizienten in verschiedenen Fällen mit lokalen Moden und die Beobachtung der lokalen Mode des Phosphors für ionen-implantiertes Phosphor in GaAs.

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  1. Departments of Materials Science and Physics, University of Southern California, California, Los Angeles

    William G. Spitzer

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O. Madelung

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Spitzer, W.G. (1971). Localized vibrational modes in semiconductors: Infrared absorption. In: Madelung, O. (eds) Festkörperprobleme 11. Advances in Solid State Physics, vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107681

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