Abstract
Epitaxial growth of SiC on hexagonal (or α)-SiC(0001) has been performed between 900 and 1 350 °C by means of solid-source molecular beam epitaxy. Our results demonstrate that similar SiC growth mechanisms act in all vapour phase epitaxial techniques. They also show that the control of the Si/C ratio and the super-saturation (S) is essential for the growth mode and the kind of polytype grown. Low temperature (T<1200 °C) deposition on on-axis SiC substrates results in the growth of 3C-SiC, which is significantly improved by an alternating supply of Si and C. On vicinal substrates, a step flow growth mode has been realized at T down to 1 050 °C. In experiments performed at T>1200 °C under near equilibrium conditions, different growth modes and conditions stabilizing the growth of certain polytypes have been found. With a step decrease of S, a step-flow growth mode of both 4H- and 6H-SiC occurs and, depending on the step configuration, we also propose a 1D nucleation at steps edges. At even lower S, homoepitaxial growth of 4H-SiC via 2D nucleation occurs on C-stabilized surfaces.
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M.Ruff, H.Hitlehner, R.Helbig, IEEE Transaction of Electronic Devices 41, 1040 (1994).
R.F.Davis, G.Kelner, M.Shur, J.W.Palmour, J.A.Edmond, Proc. IEEE 79, 677 (1991).
W.J.Choyke, The Physics and Chemistry of Carbides, Nitrides and Borides, 563–587, (Kluwer Academic Publishers, 1990).
G.Pensl and W.Choyke, Physica B 185, 264 (1991).
F.Bechstedt and P.Käckell, Phys. Rev. Lett. 75, 2180 (1995).
S.Kaneda, Y.Sakamoto, T.Hirara, T.Tanaka, J. Cryst. Growth 81, 536 (1995).
T.Yoshinobu, H.Mitsu, I.Izumikawa, T.Fuyuki, H.Matsunami, Appl. Phys. Lett. 60, 824 (1995).
L.B.Rowland, R.S.Kern, S.Tanaka, R.F.Davis, J. Mater. Res. 8, 2753 (1993).
S.Tanaka, R.S.Scott, R.F.Davis, Appl. Phys. Lett. 65, 2851 (1994).
R.S.Kern, K.Järrendahl, S.Tanaka, R.F.Davis, phys. stat. sol. (b) 202, 379 (1997).
W.F.Knippenberg, Philips Res. Repts 18, 161 (1963).
Yu.M.Tairov and V.F.Tsvetkov, Prog. Cryst. Growth Character. 7, 111 (1983).
E.N.Morkhov, I.L.Shulpina, A.S.Tregubova, Yu.A.Vodakov, Cryst. Res. Technol. 16, 879 (1981).
W.V.Muench and I.Pfaffeneder, Thin Solid Films 31, 39 (1976).
R.F.Davis, J. Cryst. Growth 137, 161 (1994).
H.Matsunami, Physica B 185, 65 (1993).
A.O.Konstantinov, C.Hallin, B.Pecz, O.Kordina, E.Janzen, J. Cryst. Growth 178, 495 (1997).
K.Shibahara, N.Kuroda, S.Nishino, H.Matsunami, Jap. J. Appl. Phys. 26, L1815 (1987).
H.S.Kong, J.T.Glass, R.F.Davis, J. Appl. Phys. 64, 2672 (1988).
T.Kimoto and H.Matsunami, J. Appl. Phys. 75, 850 (1994).
T.F.Page, The Physics and Chemistry of Carbides; Nitrides and Borides, pp. 197–214 (Kluwer Academic Publishers, Netherlands, 1990).
V.Heine, C.Cheng, R.J.Needs, J. Am. Ceram. Soc. 74, 2630 (1991).
R.A.Stein, P.Lanig, S.Leibenzeder, Mater. Sci. Eng. B11, 69 (1992).
V.D.Heydemann, N.Schultze, D.L.Barrett, G.Pensl, Appl. Phys. Lett. 69, 3728 (1996).
A.A.Maltsev, A.Yu.Maksimov, N.K.Yushin, Inst. Phys. Conf. Ser. 142, 41 (1996).
E.N.Mokhov, A.D.Roenkov, Y.A.Vodakov, G.V.Saparin, S.K.Obyden, Inst. Phys. Conf. Ser. 142, 245 (1996).
K.Chourou, M.Anikin, V.Lauer, G.Guillot, J.M.Bluet, J.Camassel, O.Chaix, R.Madar, Mater. Sci. Forum 264–268, 17 (1998).
A.Fissel, B.Schröter, W.Richter, Appl. Phys. Lett. 66, 3182 (1995).
A.Fissel, U.Kaiser, E.Ducke, B.Schröter, W.Richter, J. Cryst. Growth 154, 72 (1995).
B.Schröter, M.Kreuzberg, A.Fissel, K.Pfennighaus, W.Richter, Mater. Sci. Forum 264–268, 355 (1998).
E.Ducke, R.Kriegel, A.Fissel, U.Kaiser, B.Schröter, P.Müller, W.Richter, Inst. Phys. Conf. Ser. 142, 609 (1996).
A.Fissel, U.Kaiser, K.Pfennighaus, E.Ducke, B.Schröter, W.Richter, Inst. Phys. Conf. Ser. 142, 121 (1996).
A.Fissel, U.Kaiser, K.Pfennighaus, B.Schröter, W.Richter, Appl. Phys. Lett. 68, 1204 (1996).
A.Fissel, K.Pfennighaus, U.Kaiser, B.Schröter, W.Richter, Mater. Sci. Eng. B46, 324 (1997).
A.Fissel, K.Pfennighaus, U.Kaiser, B.Schröter, W.Richter, Diamond and Rel. Materials 6, 1316 (1997).
M.A.Kulakov, G.Henn, B.Bullemer, Surf. Sci. 346, 49 (1996).
U.Starke, J.Schadt, J.Bernhardt, M.Franke, K.Reuter, H.Wendler, K.Heinz, J.Furthmüller, P.Käckel, F.Bechstedt, Phys. Rev. Lett. 80, 758 (1998).
J.Furthmüller, P.Käckell, F.Bechstedt, A.Fissel, K.Pfennighaus, B.Schröter, W.Richter, Mater. Sci. Forum 264–268, 339 (1998).
A.Fissel, K.Pfennighaus, W.Richter, Appl. Phys. Lett. 71, 2981 (1997).
H.S.Kong, B.L.Jiang, J.T.Glass, G.A.Rozgonyi, J. Appl. Phys. 63, 2645 (1988).
W.S.Yoo, N.Hamaguchi, J.M.Carulli, N.I.Buchan, M.A.Tischeler, F.-R.Chien, A.R.Nutt, Inst. Phys. Conf. Ser. 137, 259 (1994).
F.R.Chien, S.R.Nutt, W.S.Yoo, J. Appl. Phys. 77, 3138 (1995).
A.N.Andreev, M.P.Schelgov, A.S.Tregubova, Ext. Abstract of the Intern Conf. on SiC and Rel. Mater., Stockholm, Sweden, 217 (1997).
T.Shitara, D.D.Vvedensky, M.R.Wilby, J.Zhang, J.H.Neave, B.A.Joyce, Phys. Rev. B46, 6815 (1992).
T.Sakamoto, N.J.Kawai, T.Nakagawa, K.Ohta, T.Kojima, Surf. Sci. 174, 651 (1986).
A.Fissel, M.Oehme, K.Pfennighaus, W.Richter, Surf. Sci. 383, 370 (1997).
P.Poelsma, A.F.Becker, G.Rosenfeld, R.Kunkel, N.Nagel, L.K.Verheij, G.Comsa, Surf. Sci. 272, 269 (1992).
J.A.Venables, Surf. Sci. 299/300, 798 (1994).
Y.W.Mo, J.Kleiner, M.B.Webb, M.G.Lagally, Phys. Rev. Lett. 66, 1998 (1991).
T.Kimoto and H.Matsunami, J. Appl. Phys. 78, 3132 (1995).
L.Andersohn, Th.Berke, U.Köhler, B.Voigtländer, J. Vac. Sci. Technol. A14, 312 (1996).
F.R.Chien, S.R.Nutt, W.S.Yoo, Mat. Res. Soc. Symp. Proc. 339, 399 (1995).
S.Yu.Karpov, Yu.N.Makarov, M.S.Ramm, phys. stat. sol. (b) 202, 201 (1997).
J.Drowart, G.DeMaria, M.G.Inghram, J. Chem. Phys. 29, 1015 (1958).
R.C.Glass, D.Henshall, V.F.Tsvetkov, C.H.Carter, phys. stat. sol. (b) 202, 149 (1997).
L.Zhou, P.Pirouz, J.A.Powell, Mater. Sci. Forum 264–268, 417 (1998).
F.C.Frank, J. Cryst. Growth 22, 233 (1974).
J.Zhang and G.H.Nancollas, J. Cryst. Growth 106, 181 (1990).
N.Nordell, S.Karlsson, A.O.Konstatinov, Ext. Abstract of the Intern Conf. on SiC and Rel. Mater., Stockholm, Sweden, p. 144 (1997).
T.Kimoto, A.Itoh, H.Matsunami, J. Appl. Phys. 81, 3494 (1997).
L.Li, Y.Hasegawa, T.Sakurai, J. Vac. Sci. Technol. B15, 1307 (1997).
R.Yakimova, M.Syväjärvi, E.Janzen, Mater. Sci. Forum 264–268, 159 (1998).
H.Romanus, G.Teichert, L.Spiess, Mater. Sci. Forum 264–268, 437 (1998).
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© 1999 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Fissel, A., Schröter, B., Richter, W. (1999). Growth mechanisms of SiC on α-SiC(0001) prepared by solid-source molecular beam epitaxy. In: Kramer, B. (eds) Advances in Solid State Physics 38. Advances in Solid State Physics, vol 38. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107610
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