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Metal-insulator transition in two dimensions

  • Interactions and Disorder
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Advances in Solid State Physics 39

Part of the book series: Advances in Solid State Physics ((ASSP,volume 39))

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Abstract

The metal-insulator transition has been unexpectedly discovered in Si-MOS field effect transistors and has been verified in many other semiconducting materials afterwards. The transition caused much attention as it is in apparent contradiction to the scaling behavior of non-interacting two-dimensional electrons. This work gives an overview about recent experimental work and theoretical models on the metal-insulator transition and the metallic state in two dimensions.

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Authors and Affiliations

  1. Institut für Halbleiterphysik, Universität Linz, A-4040, Linz, Austria

    Gerhard Brunthaler

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  1. Gerhard Brunthaler
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Bernhard Kramer

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© 1999 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Brunthaler, G. (1999). Metal-insulator transition in two dimensions. In: Kramer, B. (eds) Advances in Solid State Physics 39. Advances in Solid State Physics, vol 39. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107482

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  • DOI: https://doi.org/10.1007/BFb0107482

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-41573-2

  • Online ISBN: 978-3-540-44553-1

  • eBook Packages: Springer Book Archive

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