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Electronic superstructures of semiconductor surfaces and of layered transition-metal compounds

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Festkörperprobleme 15

Part of the book series: Advances in Solid State Physics ((ASSP,volume 15))

Abstract

We review some of the current work on the atomic and electronic structure of reconstructed (111) surfaces of group IV semiconductors. The reasons and the possible mechanisms that lead to formation of superstructures are discussed. Charge and spin density waves that follow from the electronic instability of a model ideal surface are considered in some detail.

The closely analogous problem of superlattices in layered transition-metal dichalcogenides such as 1T-TaS2 is also briefly touched.

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  1. G.N.S.M.-C.N.R., Isituto di Fisica, Universitá di Roma, Roma, Italy

    Erio Tosatti

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  1. Erio Tosatti
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H. J. Queisser

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© 1975 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Tosatti, E. (1975). Electronic superstructures of semiconductor surfaces and of layered transition-metal compounds. In: Queisser, H.J. (eds) Festkörperprobleme 15. Advances in Solid State Physics, vol 15. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107376

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  • DOI: https://doi.org/10.1007/BFb0107376

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