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Liquid-phase epitaxy of GaAs and the incorporation of impurities

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Festkörperprobleme 15

Part of the book series: Advances in Solid State Physics ((ASSP,volume 15))

Abstract

For III–V semiconductors liquid-phase epitaxy (LPE) has become a useful process to produce both high-purity crystals and multilayer structures for practical applications. Firstly the basic principles of LPE are reviewed. The the experimental technique and the growth of high-purity layers are described.

The incorporation of impurities during LPE is often a process far from thermodynamic equilibrium. Several factors causing departure from equilibrium are described. Macroscopic growth kinetics, the Schottky-barrier of the liquid metal-semiconductor system and the adsorption of impurities at the growing interface.

Recipient of the Schottky-Prize 1975

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Authors and Affiliations

  1. Forschungslaboratorien der Siemens AG, München, Germany

    Karl-Heinz Zschauer

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  1. Karl-Heinz Zschauer
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H. J. Queisser

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© 1975 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Zschauer, KH. (1975). Liquid-phase epitaxy of GaAs and the incorporation of impurities. In: Queisser, H.J. (eds) Festkörperprobleme 15. Advances in Solid State Physics, vol 15. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107372

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  • DOI: https://doi.org/10.1007/BFb0107372

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  • Print ISBN: 978-3-528-08021-1

  • Online ISBN: 978-3-540-75347-6

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