Kinetic confinement of electrons in modulated semiconductor structures
A new type of electron confinement in modulated semiconductor systems is proposed. The confinement occurs when the effective mass of electrons in the central region of the structure is higher than that in the outside regions. This results in a ‘kinetic well’ produced by the transverse free motion. The calculated density of confined states is similar but not identical to that of the potentially bound 2D states. It is shown that the presence of an external magnetic field parallel to the growth direction stabilizes and controls the kinetically confined states. The resulting levels are strongly nonlinear functions of magnetic field intensity. We discuss specific structures in which the kinetic confinement of electrons would be possible.
KeywordsEffective Mass Landau Level Magnetic Field Intensity Break Curve Potential Confinement
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