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Positron study of defects in GaAs

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New Developments in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 301))

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Abstract

Positron lifetime measurements and three-gamma annihilation have been applied to study point defects both iin undoped and doped GaAs. The main results are summarized bellow:

  1. i)

    in GaAs(Te) and undoped n-type GaAs the most effective positron traps are divacancies;

  2. ii)

    semiinsulating GaAs-crystals exhibit two-component lifetime spectra, which is related to some clustering of defects presented; which is related to some clustering of defects presented;

  3. iii)

    in Bridgman grown GaAs doped with Sn data about qPs-states formation are obtained.

In addition InAs crystales have been measured. In positron lifetime spectra taken from these samples three components have been observed, the longest one being related to positronium-like system formation.

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References

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Authors and Affiliations

  1. Faculty of Physics, Sofia University, 5 A.Ivanov Blvd, 1126, Sofia, Bulgaria

    M. Misheva, G. Pasajov & R. Yakimova

  2. Bulgarian Academy of Sciences, Institute for Nuclear Research and Nuclear Energy, 72 Lenin Blvd, Sofia, Bulgaria

    G. Tubmev

Authors
  1. M. Misheva
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  2. G. Pasajov
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  3. G. Tubmev
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  4. R. Yakimova
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Editor information

G. Ferenczi F. Beleznay

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© 1988 Springer-Verlag

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Misheva, M., Pasajov, G., Tubmev, G., Yakimova, R. (1988). Positron study of defects in GaAs. In: Ferenczi, G., Beleznay, F. (eds) New Developments in Semiconductor Physics. Lecture Notes in Physics, vol 301. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0034431

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  • DOI: https://doi.org/10.1007/BFb0034431

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-19215-2

  • Online ISBN: 978-3-540-39145-6

  • eBook Packages: Springer Book Archive

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