Abstract
A new MRAM technology using magnetoresistance readout and an efficient memory cell integrated with IC technology has potential for superior density and cost compared with other technologies, especially where very high density and/or non-volatility is required.
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References
Chang, Hsu, “Fields External to Open Structure Magnetic Devices Represented by Ellipsoid or Sphere," Brit. Jr. Appl. Phys., 1960.
H. Y. Yoo, A. V. Pohm, and C. S. Comstock, “2-dimensional Numerical Analysis of Laminated Thin Film Elements,” paper from 1988 MMM-Intermag Conference.
A. V. Pohm, J. S. T. Huang, J. M. Daughton, D. R. Krahn, and V. Mehra, “The Design of a One Megabit Nonvolatile MR Memory Chip Using 1.5 x 5μ.m Cells. Paper from 1988 MMM-Intermag Conference.
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© 1989 Springer-Verlag
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Daughton, J.M. (1989). Thin film magnetic RAM devices. In: Maclin, A.P., Gill, T.L., Zachary, W.W. (eds) Magnetic Phenomena. Lecture Notes in Physics, vol 337. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0020704
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DOI: https://doi.org/10.1007/BFb0020704
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