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Molecular beam epitaxy of semimagnetic semiconductors

  • Part 2. Artificially Structured Magnetic Materials
  • Conference paper
  • First Online:
Book cover Magnetic Phenomena

Part of the book series: Lecture Notes in Physics ((LNP,volume 337))

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Abstract

Molecular beam epitaxy is used for the growth of novel microstructures involving magnetic and semimagnetic semiconductor compounds. The magnetic properties, through optical measurements, contribute to our understanding of carrier confinement in quantum well structures. At the same time, structures incorporating hetertofore hypothetical materials such as zincblende MnSe, provide for the study of new magnetic semiconductors.

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Author information

Authors and Affiliations

  1. School of Electrical Engineering, Purdue University, 47907, West Lafayette, IN

    R. L. Gunshor

  2. Department of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, 02139, Cambridge, MA

    L. A. Kolodziejsk

  3. Division of Engineering, Brown University, 02912, Providence, RI

    A. V. Nurmikko

Authors
  1. R. L. Gunshor
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  2. L. A. Kolodziejsk
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  3. A. V. Nurmikko
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Editor information

A. P. Maclin T. L. Gill W. W. Zachary

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© 1989 Springer-Verlag

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Gunshor, R.L., Kolodziejsk, L.A., Nurmikko, A.V. (1989). Molecular beam epitaxy of semimagnetic semiconductors. In: Maclin, A.P., Gill, T.L., Zachary, W.W. (eds) Magnetic Phenomena. Lecture Notes in Physics, vol 337. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0020698

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  • DOI: https://doi.org/10.1007/BFb0020698

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-51428-2

  • Online ISBN: 978-3-540-69985-9

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