Abstract
The requirement for domestic high voltage and large power insulated gate bipolar transistor (IGBT) is urgent, while the reliability of domestic IGBTs limit their application. In order to improve high temperature reverse bias (HTRB) reliability performance of high voltage bond wired IGBT module, failure analysis is carried out aiming at failed 3300 V IGBT module after HTRB test in this paper. Firstly, the terminal structure of IGBT is introduced. Then, the main failure modes on the device electrical performance and typical failure chip morphologies are summarized. The failure mechanisms of IGBT and diode chips are analyzed in detail, by sample preparation and scanning electron microscope (SEM) analyses, and the corresponding improvement measures are put forward. Finally, the device is improved by passivation process and terminal structure optimization and tested under HTRB for 1000 h at 150 ℃.The test results show that HTRB reliability of the device is improved.
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Acknowledgment
This work is supported by Science and Technology Project of State Grid of China “Research on gate performance degradation law of IGBT devices under high temperature and high pressure conditions and its influence on device performance”. Meanwhile, thanks for the experimental support of State Key Laboratory of Advanced Power Transmission Technology.
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Cui, M., Chen, Z., Li, Y., Zhang, Y., Yang, X., Zhao, Z. (2023). Research on HTRB Failure Mechanisms of High Voltage IGBT Module. In: Li, J., Xie, K., Hu, J., Yang, Q. (eds) The Proceedings of the 17th Annual Conference of China Electrotechnical Society. ACCES 2022. Lecture Notes in Electrical Engineering, vol 1013. Springer, Singapore. https://doi.org/10.1007/978-981-99-0451-8_101
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DOI: https://doi.org/10.1007/978-981-99-0451-8_101
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