Abstract
The conduction current of power semiconductor devices serves as a necessary reference value for switching trajectory optimization, junction temperature monitoring, and aging assessment functions of intelligent active gate drives. This paper proposes a detection method for conduction current during switching transient of SiC MOSFET based on second-order passive filtering. Under the high-speed variation of drain current during the switching transient, the mutual inductance coil generates an induced potential. The induced voltage can be effectively restored, and the high-frequency oscillation be attenuated by implementing a second-order passive R-C filter. By selecting specific parameters for resistance and capacitance, the analysis of a second-order low-pass filter function validates the feasibility of using filtering time as an equivalent electrical parameter for the conduction current. The effectiveness of a passive filter circuit is validated through double-pulse experiments. The results indicate that the filtering time demonstrates high sensitivity and accuracy to the conduction current during switching transient. Moreover, the filtering time remains unaffected by the rate of drain current, indicating its strong universality and applicability to different specifications of SiC MOSFET modules.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Henn, J., Ludecke, C., Laumen, M., et al.: Intelligent gate drivers for future power converters. IEEE Trans. Power Electron. 37(3), 3484–3503 (2022)
Sukhatme, Y., Miryala, K.V., Ganesan, P., et al.: Digitally controlled gate current source-based active gate driver for silicon carbide MOSFETs. IEEE Trans. Industr. Electron. 67(12), 10121–10133 (2020)
Zhang, Q., Lu, G., Yang, Y., et al.: A high-frequency online junction temperature monitoring method for SiC MOSFETs based on on-state resistance with aging compensation. IEEE Trans. Industr. Electron.Industr. Electron. 70(7), 7393–7405 (2023)
Zeng, Z., Li, X.: Comparative study on multiple degrees of freedom of gate drivers for transient behavior regulation of SiC MOSFET. IEEE Trans. Power Electron. 33(10), 8754–8763 (2018)
Pu, S., Ugur, E., Yang, F., et al.: In situ degradation monitoring of SiC MOSFET based on switching transient measurement. IEEE Trans. Industr. Electron. 67(6), 5092–5100 (2020)
Qi, J., Yang, X., Li, X., et al.: Temperature dependence of dynamic performance characterization of 1.2-kV SiC Power MOSFETs compared with Si IGBTs for wide temperature applications. IEEE Trans. Power Electr. 34(9), 9105–9117 (2019)
Ding, X., Song, X., Zhao, Z., et al.: Active junction temperature control for SiC MOSFETs based on a resistor-less gate driver. IEEE J. Emerging Selected Topics Power Electr. 10(5), 4952–4964 (2022)
Slavko, M., Vladimir, M., Wang, J., et al.: Gate-driver integrated junction temperature estimation of SiC MOSFET modules. IEEE J. Emerging Selected Topics Power Electr. 10(5), 4965–4980 (2022)
Nayak, P., Hatua, K.: Active gate driving technique for a 1200 V SiC MOSFET to minimize detrimental effects of parasitic inductance in the converter layout. IEEE Trans. Ind. Appl. 54(2), 1622–1633 (2018)
Lobsiger, Y., Kolar, J.W.: Closed-loop d IGBT gate driver. IEEE Trans. Power Electron. 30(6), 3402–3417 (2015)
Wang, J., Mocevic, S., Burgos, R., et al.: High-scalability enhanced gate drivers for SiC MOSFET Modules with transient immunity beyond 100 V/ns. IEEE Trans. Power Electron. 35(10), 10180–10199 (2020)
Lee, J., Ann, S., Sim, D.H., et al.: Design guideline and practical solution of PCB-type rogowski current sensor for SiC MOSFET Short-circuit protection based on frequency analysis. In: IEEE Applied Power Electronics Conference and Exposition (APEC), Houston, TX, USA, pp. 1352–1357 (2022)
Mocevic, S., Wang, J., Burgos, R., et al.: Rogowski Switch-current sensor self-calibration on enhanced gate driver for 10 kV SiC MOSFETs. In: IEEE 12th Energy Conversion Congress & Exposition-Asia (ECCE-Asia), Singapore, pp. 1420–1425 (2021)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2024 Beijing Paike Culture Commu. Co., Ltd.
About this paper
Cite this paper
Zhang, J., Deng, D., Guo, Z., Tan, G. (2024). In Situ Conduction Current Extraction of SiC MOSFET Modules in Switching Transient Based on Second-Order Passive Filtering. In: Cai, C., Qu, X., Mai, R., Zhang, P., Chai, W., Wu, S. (eds) The Proceedings of 2023 International Conference on Wireless Power Transfer (ICWPT2023). ICWPT 2023. Lecture Notes in Electrical Engineering, vol 1160. Springer, Singapore. https://doi.org/10.1007/978-981-97-0865-9_55
Download citation
DOI: https://doi.org/10.1007/978-981-97-0865-9_55
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-97-0864-2
Online ISBN: 978-981-97-0865-9
eBook Packages: EngineeringEngineering (R0)