Abstract
In this paper, we have developed a temperature-dependent analytical model to study the effectiveness of DMG-HK Trapezoidal FinFET for high temperature operation. It is demonstrated that the proposed device with incorporation of dual material gate and high K layer leads to less degradation in device performance at high temperature as compared to conventional devices. The improvement is seen in terms of reduced threshold voltage sensitivity and DIBL with change in temperature along with suppressed hot carrier effects and improved subthreshold slope.
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© 2021 The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
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Goyal, P., Kaur, H. (2021). Assessing the Suitability of DMG-HK Trapezoidal FinFET for High Temperature Applications. In: Sharma, D.K., Son, L.H., Sharma, R., Cengiz, K. (eds) Micro-Electronics and Telecommunication Engineering. Lecture Notes in Networks and Systems, vol 179. Springer, Singapore. https://doi.org/10.1007/978-981-33-4687-1_9
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DOI: https://doi.org/10.1007/978-981-33-4687-1_9
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