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Impact of Pocket in a Doping-Less Tunnel Field Effect Transistor

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Proceedings of 6th International Conference on Recent Trends in Computing

Part of the book series: Lecture Notes in Networks and Systems ((LNNS,volume 177))

Abstract

In this paper, we have proposed the use of n-type pocket in a doping-less tunnel field effect transistor to improve the performance of the device. We have proposed a smart strategy to improve the on-state current and sub-threshold slope SS of the device. The main concept is to use the chemical doping at a specific point rather than the whole device. This strategy helps to inherit the doping-less nature of the device up to a large extent. The presence of n-type pocket at gate-source interface reduces the tunnel barrier and increases the electric field in the on-state (VGS = VDS = 1 V). This leads to higher ION (8×), better point SS (~7 mV/dec), and larger ION/IOFF ratio (1013). We have also investigated other parameters such as gm (10×), fT (6×), CGG (1.45x) which have shown an increase in n-type pocket DLTFET. The improved linearity parameters such as gm3, VIP2, VIP3, IIP3 have also been reported. Gate scaling down to 20 nm has also been performed which has yielded significantly better results for pocket DLTFET.

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Acknowledgements

This work was carried out under the project of “Visvesvaraya PhD Scheme for Electronics and IT” at Aligarh Muslim University, by Media Lab Asia (A Section 25 Company of Department of Electronics and Information Technology, Ministry of Communications and Information Technology, Govt. of India). The revised implementation Order No. is “PhD-MLA/4(39)/2015-16/ Dated 30.05.2016.” The authors are also thankful to the University Grant Commission to support this work in part under the DSA-I and start-up grants.

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Authors and Affiliations

  1. Department of Electronics Engineering, Z.H.C.E.T, Aligarh Muslim University, Aligarh, India

    Mohd Adil Raushan, Mohd Mustaqeem, Shameem Ahmad & Mohd Jawaid Siddiqui

Authors
  1. Mohd Adil Raushan
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  2. Mohd Mustaqeem
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  3. Shameem Ahmad
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  4. Mohd Jawaid Siddiqui
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Corresponding author

Correspondence to Mohd Adil Raushan .

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Editors and Affiliations

  1. SRM Institute of Science and Technology Delhi-NCR Campus, Modinagar, Uttar Pradesh, India

    Rajendra Prasad Mahapatra

  2. Indian Institute of Technology Delhi, New Delhi, Delhi, India

    B. K. Panigrahi

  3. Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India

    Brajesh K. Kaushik

  4. Indian Institute of Technology Roorkee, Roorkee, Uttarakhand, India

    Sudip Roy

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Raushan, M.A., Mustaqeem, M., Ahmad, S., Siddiqui, M.J. (2021). Impact of Pocket in a Doping-Less Tunnel Field Effect Transistor. In: Mahapatra, R.P., Panigrahi, B.K., Kaushik, B.K., Roy, S. (eds) Proceedings of 6th International Conference on Recent Trends in Computing. Lecture Notes in Networks and Systems, vol 177. Springer, Singapore. https://doi.org/10.1007/978-981-33-4501-0_18

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