Abstract
In this paper thin film of MoS2 has been deposited on pSi substrate at different time by RF sputtering method, X-ray diffraction pattern shows crystalline growth. Different optical parameters like refractive index, extinction coefficient and dielectric constant have been analyzed. It has been observed that the estimated optical parameters show the thickness depended behavior. Surface analysis has been done using FESEM that agrees with obtained optical parameters. All the optical parameters have been calculated using VASE Ellipsometer.
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Singh, R., Tripathi, S. (2020). Refractive Index and Dielectric Constant Evaluation of RF Sputtered Few Layer MoS2 Thin Film. In: Dutta, D., Kar, H., Kumar, C., Bhadauria, V. (eds) Advances in VLSI, Communication, and Signal Processing. Lecture Notes in Electrical Engineering, vol 587. Springer, Singapore. https://doi.org/10.1007/978-981-32-9775-3_59
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DOI: https://doi.org/10.1007/978-981-32-9775-3_59
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