Abstract
We report the simulation of high-efficiency c-silicon Passivated Emitter Rear Contact (PERC) type solar cell structure with rear side passivated with HfO2 as a passivating material. Variation in the half-length of pyramid has been carried out to investigate its effect on the solar cell electrical characteristics such as Fill Factor (FF), Open-Circuit Voltage (Voc), and efficiency. Aluminum Back Surface Field (Al-BSF) and PERC-type solar cell with Al2O3 passivation layer structures were also modeled for comparison. Effect of variation in passivation layer (HfO2), thickness (10 and 15 nm), and permittivity (k = 14 and 25) on the solar cell electrical characteristics has been investigated. The result shows the efficiency improvement in the PERC solar cell with HfO2 passivation layer by 0.5941 and 0.983% as compared to the Al-BSF and PERC with Al2O3 passivation layer at 8 µm pyramid half-length. Increased series resistance and reduced FF has been observed with the incorporation of passivation layer at the solar cell structure. Negligible effect of passivation layer thickness has been observed on the solar cell electrical parameters whereas the permittivity value does have significant effect.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
U.S. Energy Information Administration: International Energy Outlook 2016, vol. 0484 (2016)
World Bank: Fossil Fuel Energy Consumption (2014)
Warneck, P., Hansen, J.: Peter warneck. J. Atmos. Chem. 30(3), 409–412 (1998)
Council of the European Union: European Council Brussels, 22 and 23 March 2005. Presidency Conclusions, vol. 2005 (2005)
Manju, S., Sagar, N.: Progressing towards the development of sustainable energy: a critical review on the current status, applications, developmental barriers and prospects of solar photovoltaic systems in India. Renew. Sustain. Energy Rev. 70, 298–313, 01 Apr 2017 (Pergamon) (2017)
Jain, S., Jain, N.K., Vaughn, W.J.: Challenges in meeting all of India’s electricity from solar: an energetic approach. Renew. Sustain. Energy Rev. 82, 1006–1013 (2018)
Financial Relations: Annual report. Available http://mnre.gov.in/file-manager/annual-report/2015-2016/EN/Chapter1/chapter_1.htm. Accessed 17 Jan 2018 (Online)
World Energy Council: World Energy Resources: 2013 Survey (2013)
Goetzberger, A., Knobloch, J., Voß, B.: The p-n Junction. Cryst. Silicon Sol. Cells, pp. 49–65 (2014)
Goetzberger, A., Knobloch, J., Voß, B.: The principles of photovoltaics. In: Crystalline Silicon Solar Cells. Wiley, Chichester, UK, pp. 9–48 (2014)
Philipps, S., Ise, F., Warmuth, W.: Fraunhofer ISE: Photovoltaics Report (2017)
Solar Cell Market Size, Share, Industry Report, 2022: Available https://www.grandviewresearch.com/industry-analysis/solar-cell-market. Accessed 18 Jan 2018 (2016) (Online)
Solanki, C.: Solar Photovoltaics Fundamentals, Technologies and Applications (2009)
Hoex, B., Schmidt, J., Bock, R., Altermatt, P.P., van de Sanden, M.C.M., Kessels, W.M.M.: Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3. Appl. Phys. Lett. 91(11), 112107 (2007)
Hoex, B., Schmidt, J., Pohl, P., van de Sanden, M.C.M., Kessels, W.M.M.: Silicon surface passivation by atomic layer deposited Al2O3. J. Appl. Phys. 104(4), 44903 (2008)
Wang, J., Farrokh Baroughi, M., Shanmugam, M., Samadzadeh-Tarighat, R., Sivoththaman, S., Paul, S.: Passivation of silicon surfaces using atomic layer deposited metal oxides. MRS Proc. 1153, pp. 1153-A07-17 (2011)
Wang, J.W.J., Baroughi, M.F., Bills, B., Galipeau, D., Samadzadeh, R., Sivoththaman, S.: Substrate dependence of surface passivation using atomic layer deposited dielectrics. In: Proceedings of the 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, pp. 1988–1991 (2009)
Lin, F., et al.: Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide films service low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide films. ECS J. Solid State Sci. Technol. 2(1), 1–5 (2013)
Acknowledgments
The authors would like to express there sincere thanks to Prof. P. Nagabhushan, Director, IIIT-A for his constant encouragement and support.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2020 Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Jha, R.K., Singh, P., Goswami, M., Singh, B.R. (2020). Impact of HfO2 as Passivation Layer in the Simulation of PERC-Type Solar Cell. In: Dutta, D., Kar, H., Kumar, C., Bhadauria, V. (eds) Advances in VLSI, Communication, and Signal Processing. Lecture Notes in Electrical Engineering, vol 587. Springer, Singapore. https://doi.org/10.1007/978-981-32-9775-3_46
Download citation
DOI: https://doi.org/10.1007/978-981-32-9775-3_46
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-32-9774-6
Online ISBN: 978-981-32-9775-3
eBook Packages: EngineeringEngineering (R0)