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Numerical Measurement of Oscillating Parameters of IMPATT Using Group IV and Group III–V Materials

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Advances in VLSI, Communication, and Signal Processing

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 587))

Abstract

With the help of numerical approach, we have determined the oscillating parameters of Double Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) diode oscillator using different semiconducting materials at Ka band (26.5–40 GHz). The materials used are silicon, germanium, gallium arsenide, indium phosphide, and wurtzite gallium nitride. Avalanche region of IMPATT behaves as an LC parallel circuit. Therefore, inductance, capacitance, and resonant frequency are computed in the avalanche zone by taking all materials individually as substrate elements. Numerically measured inductance and capacitance profiles are in good agreement with earlier reported experimental curves.

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Acknowledgements

This work was supported by the Department of Electronics and Communication Engineering, VNIT, Nagpur, India.

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Authors and Affiliations

  1. Electronics and Communication Engineering Department, Visvesvaraya National Institute of Technology, Nagpur, 440010, India

    Girish Chandra Ghivela, Prince Kumar & Joydeep Sengupta

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  1. Girish Chandra Ghivela
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  2. Prince Kumar
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  3. Joydeep Sengupta
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Corresponding author

Correspondence to Girish Chandra Ghivela .

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Editors and Affiliations

  1. Ministry of Electronics and Information Technology, New Delhi, Delhi, India

    Debashis Dutta

  2. Motilal Nehru National Institute of Technology Allahabad, Allahabad, Uttar Pradesh, India

    Haranath Kar

  3. Indian Institute of Technology (ISM), Dhanbad, Jharkhand, India

    Chiranjeev Kumar

  4. Motilal Nehru National Institute of Technology Allahabad, Allahabad, Uttar Pradesh, India

    Vijaya Bhadauria

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Ghivela, G.C., Kumar, P., Sengupta, J. (2020). Numerical Measurement of Oscillating Parameters of IMPATT Using Group IV and Group III–V Materials. In: Dutta, D., Kar, H., Kumar, C., Bhadauria, V. (eds) Advances in VLSI, Communication, and Signal Processing. Lecture Notes in Electrical Engineering, vol 587. Springer, Singapore. https://doi.org/10.1007/978-981-32-9775-3_37

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  • DOI: https://doi.org/10.1007/978-981-32-9775-3_37

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-32-9774-6

  • Online ISBN: 978-981-32-9775-3

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