Abstract
Drain current and pinch-off voltage of ultrathin double-gate MOSFET are analytically calculated based on Taur’s model, where the centre potential is derived from Ortiz-Conde formulation. Drain current is computed for different structural parameters in lower nanometric range, and the effect of the high-K dielectric is investigated. Pinch-off voltage shift is therefore derived from the simulated findings and compared with the available findings followed by Ortiz-Conde. The result shows a measurable variation in the parameters, and the root cause is explained from the electrostatic point of view. Findings are important for conductance calculation.
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Chakraborty, R., Mondal, D., Deyasi, A. (2020). Investigating Effect of Structural Parameters on Static Characteristics of Ultrathin DG MOSFET Using Taur’s Model. In: Mandal, J., Bhattacharya, K., Majumdar, I., Mandal, S. (eds) Information, Photonics and Communication. Lecture Notes in Networks and Systems, vol 79. Springer, Singapore. https://doi.org/10.1007/978-981-32-9453-0_2
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DOI: https://doi.org/10.1007/978-981-32-9453-0_2
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