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TAPE of Si Wafers

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Exoemission from Processed Solid Surfaces and Gas Adsorption

Part of the book series: Springer Series in Surface Sciences ((SSSUR,volume 73))

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Abstract

We first outline the effect of the excitation method and gas adsorption (such as O2 and H2O) on the TSEE glow curves of the SiO2 layer. We then describe TAPE of Si wafers obtained under temperature scans and incident light wavelength scans. We also report the characteristics (activation energy, photothreshold, and total counts of emitted electrons) of Si samples with an oxide layer and Si samples implanted with H, Si, and Ar ions.

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Authors and Affiliations

  1. Ibaraki University, Hitachi, Japan

    Yoshihiro Momose

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  1. Yoshihiro Momose
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Correspondence to Yoshihiro Momose .

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Momose, Y. (2023). TAPE of Si Wafers. In: Exoemission from Processed Solid Surfaces and Gas Adsorption. Springer Series in Surface Sciences, vol 73. Springer, Singapore. https://doi.org/10.1007/978-981-19-6948-5_9

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