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Comparative Analysis of Different Types of Gate Field Plate AlGaN/GaN HEMT

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Micro and Nanoelectronics Devices, Circuits and Systems

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 904))

Abstract

Aluminium gallium nitride/gallium nitride (AlGaN/GaN) (AlGaN/GaN) have become a major focus for all electronic devices based on GaN, due to the beneficial merger of material properties, including a good thermal conductivity, a wide band gap, high peak and saturated electron velocity, high critical breakdown field, and the capability to set up high-quality hetero-interfaces that forms a high sheet density two-dimensional electron gas (2DEG). Various structures have been proposed to increase the breakdown voltage (Vbr) of the device. One of them is introduction of a field plate (FP). In this paper, various types of FPs are considered and compared with respect to the Vbr characteristics and analogue characteristics.

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Authors and Affiliations

  1. Mizoram University, Aizawl, Mizoram, India

    Pichingla Kharei, Achinta Baidya & Niladri Pratap Maity

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  1. Pichingla Kharei
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  2. Achinta Baidya
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  3. Niladri Pratap Maity
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Corresponding author

Correspondence to Pichingla Kharei .

Editor information

Editors and Affiliations

  1. Electronics and Communication Engineering, National Institute Of Technology Silchar, Silchar, India

    Trupti Ranjan Lenka

  2. Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USA

    Durgamadhab Misra

  3. Electronic Materials Engineering, Australian National University, Canberra, ACT, Australia

    Lan Fu

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© 2023 The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

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Kharei, P., Baidya, A., Maity, N.P. (2023). Comparative Analysis of Different Types of Gate Field Plate AlGaN/GaN HEMT. In: Lenka, T.R., Misra, D., Fu, L. (eds) Micro and Nanoelectronics Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 904. Springer, Singapore. https://doi.org/10.1007/978-981-19-2308-1_10

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  • DOI: https://doi.org/10.1007/978-981-19-2308-1_10

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-19-2307-4

  • Online ISBN: 978-981-19-2308-1

  • eBook Packages: EngineeringEngineering (R0)

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