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Electro-Thermal Model for Field Effective Transistors

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Recent Advances in Hybrid and Electric Automotive Technologies

Part of the book series: Lecture Notes in Mechanical Engineering ((LNME))

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Abstract

This paper describes an electro-thermal model, which gives the real-time junction temperature of the MOSFET. The thermal model is obtained from the thermal impedance curve given in the datasheet of the selected MOSFET (IAUT260N10S5N019). The RC network models are obtained from the thermal impedance curve given in the MOSFET datasheet. The resistance and capacitance values for the thermal network are obtained after curve fitting the thermal impedance curve. The obtained thermal network model is then validated on MATLAB Simulink. The simulations are carried out on MATLAB Simulink, the software results were validated using NEXPERIA application note experiments, and the results conclude the validity of the Simulink model. The simulations were run by constructing a thermal network from the obtained resistance and capacitance values and supplying power of a predetermined value through the thermal network to obtain the thermal impedance. This is then compared with the thermal impedance curve in the datasheet of the MOSFET. The comparison shows that the results obtained from the thermal network are similar to the thermal impedance curve of the MOSFET.

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Acknowledgements

The authors acknowledge the financial support from M/s Garrett—Advancing Motion for conducting the present study.

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Authors and Affiliations

  1. Department of Mechanical Engineering, PES University, Bangalore, 560085, India

    Allen Denny, Neelkanth Kirloskar, Babu Rao Ponangi & V. Krishna

  2. PMR Lab, Department of Mechanical Engineering, PES University, Bangalore, 560085, India

    Babu Rao Ponangi & V. Krishna

  3. Department of Electrical and Electronics Engineering, PES University, Bangalore, 560085, India

    Rex Joseph

Authors
  1. Allen Denny
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  2. Neelkanth Kirloskar
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  3. Babu Rao Ponangi
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  4. Rex Joseph
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  5. V. Krishna
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Corresponding author

Correspondence to Babu Rao Ponangi .

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Editors and Affiliations

  1. Department of Mechanical Engineering, PES University, Bengaluru, India

    V. Krishna

  2. IIT Madras, Tamil Nadu, India

    K. N. Seetharamu

  3. G. W. Woodruff School of Mechanical Engineering, Georgia, USA

    Yogendra Kumar Joshi

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Denny, A., Kirloskar, N., Ponangi, B.R., Joseph, R., Krishna, V. (2022). Electro-Thermal Model for Field Effective Transistors. In: Krishna, V., Seetharamu, K.N., Joshi, Y.K. (eds) Recent Advances in Hybrid and Electric Automotive Technologies. Lecture Notes in Mechanical Engineering. Springer, Singapore. https://doi.org/10.1007/978-981-19-2091-2_21

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  • DOI: https://doi.org/10.1007/978-981-19-2091-2_21

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-19-2093-6

  • Online ISBN: 978-981-19-2091-2

  • eBook Packages: EngineeringEngineering (R0)

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