Abstract
This present work reports development of an analytical model for InGaN/GaN multi-junction solar cells having to vary in contents validated with numerical simulation results using Sentaurus TCAD. The performance of the solar cells is optimized with reference to various Mg doping concentrations in the cap layer and in the content of the two layers acting as the active region of the solar cell. Results obtained from our model show an excellent concordance with the simulation data and also limited experimental data reported elsewhere. The simulation study reveals that the optimum Mg doping density is 1019 cm−3 which balances between the front surface recombination phenomena and the extraction of electron–hole pair at the two ends. The obtained results show that the proposed solar cell yields a peak power conversion efficiency of 2.87%, a fill-factor of 64%, a short-circuit current density of 6.60 mA-cm−2, and an open-circuit voltage of 0.68 V. Most importantly, our optimized solar cell yields 70% improvement in power conversion efficiency in comparison with the conventional structure at AM1.5 solar irradiance.
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Acknowledgements
The first author acknowledges the “UNIVERSITY RESEARCH FELLOWSHIP” program under the University of Calcutta for providing financial support for University Research Fellow (URF) vide Ref. No. DPO/44/Fellow (University) dtd. 12.02.2021.
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Pramita, N., Abhijit, B. (2022). Radiation-Resilient GaN/InxGa1-xN Multi-junction Solar Cells with Varying in Contents. In: Sikdar, B., Prasad Maity, S., Samanta, J., Roy, A. (eds) Proceedings of the 3rd International Conference on Communication, Devices and Computing. ICCDC 2021. Lecture Notes in Electrical Engineering, vol 851. Springer, Singapore. https://doi.org/10.1007/978-981-16-9154-6_16
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