Abstract
This ongoing work reports the heavy doping effect on the Aluminum Nitride (AlN) semiconductor (SC) material, illustrated via its energy-band structure (EBS). The research correlates the bandgap energy (BE) and depletion region (DR), which are then applied to the estimation of light-emitting diode (LED) luminescence spectrum (LS). The measurements are compared with different dopant concentrations (1 × 1018 cm−3 ‒1 × 1021 cm−3). Having the Gallium Arsenide (GaAs) properties as the controlled variable, the EBS is validated with literature findings. The measured band gap energy of AlN shifts from 6.2435 to 6.2326 eV. It decreased as the dopant concentration increased. However, the active spatial regions, reduced from (1.0250 × 10−1 to 4.5000 × 10−3 μm) × 1 μm2. The findings are compared with the output LS of LED using the same SC material. The changes in BE and DR are consistent with the LS peak intensity wavelength and relative intensity to all the chosen doping concentrations. Though acquiring this consistency, an extensive discussion with collaboration in material science studies will further strengthen the understanding regarding these behaviours.
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References
J. Shealy et al., in Gallium Nitride (GaN) HEMT’s: Progress and Potential for Commercial Applications. IEEE, vol. 24th Annua (2002) pp. 243–246
S.P. Denbaars et al., Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays. Acta Mater. 61(3), 945–951 (2013)
A.S.A. Fletcher, D. Nirmal, A survey of Gallium Nitride HEMT for RF and high power applications. Superlattices Microstruct. 109, 519–537 (2017)
W. Metaferia, K.L. Schulte, J. Simon, S. Johnston, A.J. Ptak, Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy. Nat. Commun. 10(1), 1–8 (2019)
A.R. Gobat, M.F. Lamorte, G.W. Mciver, Characteristics of high-conversion-efficiency gallium-arsenide solar cells. IRE Trans. Mil. Electron. MIL 6(1), 20–27 (1962)
K.R.L.B.S.V.G.P.L.V. Robert, R. Seal II, J. Gambogi, Gallium. United States Geol. Surv. Bull. 1802-H, H1–H35 (2017)
D. Vasileska, S.M. Goodnick, G. Klimeck, Computational electronics: semiclassical and quantum device modeling and simulation (2017)
S. Datta, Quantum Transport: Atom to Transistor (Cambridge University Press, 2005)
I. Pisarenko, E. Ryndin, Drift-diffusion simulation of high-speed optoelectronic devices. Electronics 8(1) (2019)
A. Shaari, A.F. Ahmad Noorden, S.N. Mohamad, S. Daud, Geometrical analysis of light-emitting diode for enhancing extraction efficiency. J. Sustain. Sci. Manag. 15(6), 68–84 (2020)
E.F. Schubert, Light-Emitting Diodes (2nd edn., Cambridge University Press, 2018)
Y. Wu, D.-B. Zhang, Z. Zhao, J. Pei, B.-P. Zhang, Enhanced thermoelectric properties of ZnO: C doping and band gap tuning. J. Eur. Ceram. Soc. (2020)
K.P. Misra, S. Jain, A. Agarwala, N. Halder, S. Chattopadhyay, Effective mass model supported band gap variation in cobalt-doped ZnO nanoparticles obtained by co-precipitation. Semiconductors 54(3), 311–316 (2020)
X. Zhang et al., Enhanced performances of PVK/ZnO nanorods/graphene heterostructure UV photodetector via piezo-phototronic interface engineering. Adv. Mater. Interfaces 6(23), 1–8 (2019)
V.P. Sirkeli, O. Yilmazoglu, F. Küppers, H.L. Hartnagel, Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures. Semicond. Sci. Technol. 30(6), 065005 (2015)
R.A. Makin, K. York, S.M. Durbin, R.J. Reeves, Revisiting semiconductor band gaps through structural motifs: An Ising model perspective. Phys. Rev. B 102(11), 115202 (2020)
A. Shaari, F.A. Ahmad Fajri, A.F. Ahmad Noorden, M.Z. Abdul Kadir, S. Daud, Optimizing the efficiency of gallium nitride-based light-emitting diodes from contact area of current spreading to electrode. Microw. Opt. Technol. Lett., 1–5 (2020)
S. Sujecki, Photonics Modelling and Design (2014)
V. Bougrov, M.E. Levinshtein, S.L. Rumyantsev, A. Zubrilov, Properties of Advanced Semiconductor Materials GaN,AlN,InN,BN,SiC,SiGe (Wiley, New York, 2001), p. 207
J. Piprek, Semiconductor Optoelectronic Devices (Elsevier, 2013)
A. Dittmer, R. Izsák, F. Neese, D. Maganas, Accurate band gap predictions of semiconductors in the framework of the similarity transformed equation of motion coupled cluster theory. Inorg. Chem. 58(14), 9303–9315 (2019)
M.F.N. Mohsen, Modification of Welge’s method of shock front location in the Buckley-Leverett problem for nonzero initial condition. Soc. Pet. Eng. J. 25(4), 521–523 (1985)
H.J. Welge, A simplified method for computing oil recovery by gas or water drive introduction and theoretical background. Pet. Trans. AIME 195(13), 91–98 (1951)
Y. Peng et al., Tunable electronic structures of p -type Mg doping in AlN nanosheet. Appl. Phys. Lett. 116(044306), 0–4 (2014)
C.A. Klein, Bandgap dependence and related features of radiation ionization energies in semiconductors bandgap dependence and related features of radiation ionization energies. J. Appl. Phys. 39(4), 2029–2038 (2003)
J.Y. Tsao et al., Solid-state lighting: an integrated human factors, technology, and economic perspective. Proc. IEEE 98(7), 1162–1179 (2010)
J.S. Harris et al., On compensation in Si-doped AlN on compensation in Si-doped AlN. Appl. Phys. Lett. 112(152101), 15–20 (2018)
Acknowledgements
This work was supported by CAPTOR, Kulliyyah of Science, International Islamic University Malaysia, and the Ministry of Education (Malaysia) through the Fundamental Research Grant Scheme (Project No.: FRGS 19-033-0641) (References No.: FRGS/1/2018/TK07/UIAM/02/1).
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Ahmad Fajri, F.A., Hairol Aman, M.A., Ahmad Noorden, A.F., Abdul Hamid, A.N., Abdul Aziz, A. (2022). Doping Effect on Bandgap Energy and Luminescence Spectrum for AlN-Based Semiconductor. In: Mustapha, A.B., Shamsuddin, S., Zuhaib Haider Rizvi, S., Asman, S.B., Jamaian, S.S. (eds) Proceedings of the 7th International Conference on the Applications of Science and Mathematics 2021. Springer Proceedings in Physics, vol 273. Springer, Singapore. https://doi.org/10.1007/978-981-16-8903-1_5
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