Abstract
In the present era of optoelectronics devices, the low-cost, ultra-thin and transparent materials with tunable electronics and optoelectronics properties are in huge demand. The emerging family of nanomaterials, i.e. transition metal dichalcogenides (TMDs), has the potential and properties to fulfil the demand of modern optoelectronics devices. The molybdenum disulphide (MoS2), an inorganic compound, is a new emerging material of TMD family which shows exceptional electronics as well as optoelectronics properties. In monolayer form, MoS2 acted as a direct bandgap semiconductor with bandgap energy 1.8 eV. Worldwide researchers developed the MoS2 with different types of nanostructures such as nanosheets, nanoflowers as well as quantum dots, and all types of nanostructures proven the different types of electronic and optoelectronics properties. This chapter deals with the selective synthesis of MoS2 nanostructures along with the analysis of their basic construction and respective electronics and optoelectronics properties. We discussed in detail various synthesis technologies for growing different types of MoS2 nanostructure with their advantages, disadvantages as well as outcomes. The detailed analysis on pristine MoS2 nanostructures as well as hybrid structure based linear and polarized-light photodetectors has been made. We have discussed different photodetectors (linear and polarized-light) which have been realized using MoS2 nanostructures. The results show that the MoS2 nanostructures act as an active material for ultra-broadband detection from the UV-Vis-NIR range of the solar spectrum. Different device architectures and composites were introduced for enhancement in the photodetection properties.
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Acknowledgments
This work was supported by the grant of project funded by Russian Science Foundation (Grant No. 21-79-00272).
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Pavelyev, V., Tripathi, N. (2022). Optical Characterization of Nanomaterials-II. In: Thakur, A., Thakur, P., Khurana, S.P. (eds) Synthesis and Applications of Nanoparticles. Springer, Singapore. https://doi.org/10.1007/978-981-16-6819-7_8
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