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Comparative Analysis of a Dopingless Tunnel FET and MOSFET-Based Current Mirror

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Recent Trends in Electronics and Communication (VCAS 2020)

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 777))

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Abstract

Basic current mirror (BCM) is made by using the novel Dopingless TFET (DLTFET) and compared with different MOSFET technologies-based BCM in this paper. Current mirrors (CMs) are generally used to make the constant current source, which means it requires a device that must produce a steady current in the saturation region, and DLTFET is one of the devices. BCM circuit is simulated by using 20 nm DLTFET and 22, 32, and 45 nm MOSFET and is compared on the basis of accuracy, off-current, output impedance, input impedance, and the bandwidth. DLTFET-based BCM performance is better than the others because it is more accurate (current error ≈ 0). Its input impedance is 99.99% lesser than the others, and its output impedance is 99.96% greater than the others.

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Acknowledgements

According to the reference letter No. 9(1)2014-MDD (NIT Delhi, INDIA), SMDP-C2SD supports this project.

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Authors and Affiliations

  1. NIT, E-699, Gali No. 20, East Gokul Pur, Delhi, 110094, India

    Harihar Nath, Suruchi Sharma, Abhishek Verma & Baljit Kaur

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  1. Harihar Nath
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  2. Suruchi Sharma
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  3. Abhishek Verma
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  4. Baljit Kaur
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Editor information

Editors and Affiliations

  1. Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad, Uttar Pradesh, India

    Amit Dhawan

  2. Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad, Uttar Pradesh, India

    Vijay Shanker Tripathi

  3. Department of Information and Communication Technology, Atal Bihari Vajpayee Indian Institute of Information Technology and Management, Gwalior, Madhya Pradesh, India

    Karm Veer Arya

  4. Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, Canada

    Kshirasagar Naik

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Nath, H., Sharma, S., Verma, A., Kaur, B. (2022). Comparative Analysis of a Dopingless Tunnel FET and MOSFET-Based Current Mirror. In: Dhawan, A., Tripathi, V.S., Arya, K.V., Naik, K. (eds) Recent Trends in Electronics and Communication. VCAS 2020. Lecture Notes in Electrical Engineering, vol 777. Springer, Singapore. https://doi.org/10.1007/978-981-16-2761-3_79

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  • DOI: https://doi.org/10.1007/978-981-16-2761-3_79

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-16-2760-6

  • Online ISBN: 978-981-16-2761-3

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