Abstract
In this paper, the design of bi-metallic capacitive shunt type RF MEMS switch is carried out and analyzed using FEM tool. The significant accomplishments in this work are the pull-in voltage that is minimized to 4.8 V and fast switching time of 7.2 µs. The upstate capacitance of the switch is observed as 300 fF, down state capacitance as 9.2 pF, which leads to have the capacitance ratio of 30.6. The material utilized for CPW line is Gold (Au) and the dielectric material utilized in between the beam and the CPW transmission line is Silicon Nitride (Si3N4). The electromagnetic characteristics are also analyzed through HFSS software.
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Srinivasa Rao, K., Shoukath Vali, S., Girija Sravani, K., Ashok Kumar, P., Guha, K. (2021). Design and Simulation of Bi-metallic RF MEMS Switch for Fast Switching Time. In: Biswas, A., Saxena, R., De, D. (eds) Microelectronics, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 755. Springer, Singapore. https://doi.org/10.1007/978-981-16-1570-2_20
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