Electromagnetic Modelling and Parameters Extraction of Metal Contact and Capacitive Type RF MEMS Switch

Abstract

This paper presents design, simulation, and performance analysis of RF MEMS switch using analytical and simulation method. The capacitive RF MEMS switches are better related with metal to metal category due to their capacity to pass on signals of larger frequency and power. The mechanical structure of switch is designed for low air gap between top membrane and bottom electrode in order to achieve low actuation voltage. The electrostatic analysis performed on switch shows low actuation voltage such as 2.64 V for capacitive design and 5.1 V for metal to metal contact switch. The RF parameters of switch are measured using HFSS tool. The scattering parameters obtained using simulation method indicate less than −1 dB insertion loss up to 60 GHz frequency. The maximum recorded isolation for capacitive design is −46.28 dB at 63.66 GHz and for DC contact is more than −50 dB up to 2.4 GHz. The electric field effect analysis helps out to comprehend the dispersal of electric charges on transmission line and actuating membrane.