Abstract
In the chapter, we have introduced the concept of tunneling magnetoresistance, magnetic tunnel junction (MTJ), and magnetic junctions. A detailed physical explanation behind the phenomenon has also been presented. In this context, quantum mechanical tunneling of conduction electrons, which is at the origin of this phenomenon, has been discussed in the light of a Transfer Matrix model. Both the cases, with and without spin-scattering at the interface, have been considered. The Jullière formula has been discussed elaborately. Furthermore, a simple description of the tunneling phenomenon has also been presented. The effect of various parameters on Tunnel Magnetoresistance has also been discussed. Measurement of spin relaxation length and time in the spacer layer is also explained in the chapter.
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Notes
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This problem can be solved using software tools such as MATLAB or MATHEMATICA.
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Dey, P., Roy, J.N. (2021). Tunnelling Magnetoresistance (TMR). In: Spintronics. Springer, Singapore. https://doi.org/10.1007/978-981-16-0069-2_4
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DOI: https://doi.org/10.1007/978-981-16-0069-2_4
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