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ZnCdS Thin Film: Preparation, Properties and Applications

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Emerging Trends in Nanotechnology

Abstract

Energy crisis is one of the serious problems around the world, but it can be normalized by renewable energy sources such as solar, wind, etc. Solar cell is a device that receives sunlight and converts it into electricity. Requirement of semiconductors in devices depends upon amplification characteristics, switching behaviour, etc. Metal chalcogenides (sulphide, selenides and tellurides) are studied in the form of thin film and is considered as heart of semiconductors due to its applications in photovoltaic cells, photoconductors, optical filters, solar cells, sensors, variety of optoelectronic devices, etc. Cadmium sulphide is a n-type semiconductor material, and it has energy bandgap 2.42 eV. Zinc is a transition element added to CdS, and its bandgap changes from 2.42 to 3.5 eV. Due to increase in bandgap, open-circuit voltage together with circuit current density of device also increases, which is attributed to greater conversion efficiency of CIGS solar cells. The preparation of ZnCdS thin films along with different Zn concentration (0.2, 0.3, 0.4, 0.5 wt%) by chemical bath deposition method has been elaborated. In this chapter, we have discussed different characteristics of ZnCdS thin films along with their synthesis process, crystal structure, energy bandgap, applications, etc.

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Authors and Affiliations

  1. Department of Physics, Chaibasa Engineering College, Kelende, Jhinkpani, 833215, India

    Suresh Kumar

  2. Department of Physics, Birla Institute of Technology Mesra, Patna Campus, Patna, 800014, India

    K. P. Tiwary

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  1. Suresh Kumar
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  2. K. P. Tiwary
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Correspondence to K. P. Tiwary .

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Editors and Affiliations

  1. Department of Applied Sciences and Humanities, Jamia Millia Islamia, New Delhi, Delhi, India

    Zishan Husain Khan

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Kumar, S., Tiwary, K.P. (2021). ZnCdS Thin Film: Preparation, Properties and Applications. In: Khan, Z.H. (eds) Emerging Trends in Nanotechnology. Springer, Singapore. https://doi.org/10.1007/978-981-15-9904-0_7

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