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Self-assembled Growth of GaN Nanostructures on Flexible Metal Foils by Laser Molecular Beam Epitaxy

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Emerging Trends in Nanotechnology

Abstract

Low-dimensional semiconductor structures such as thin films, nanorods, nanowires and zero-dimensional (0-D) quantum dots or islands possess exotic electrical and optical properties compared to their bulk counterpart. Here, 1D nanorods draw a special attention due to their high aspect ratio for potential applications in the field of sensors and other nanoscale devices. Among various semiconductors, GaN having a direct wideband gap has stimulated a great deal of research interest due to the applications in the area of light-emitting diodes, solar cells, high-power electronics devices, laser diodes, ultraviolet photodetectors and water splitting, etc. Due to the advances in flexible or wearable optoelectronic devices, it is required to fabricate inorganic semiconductors hybrid devices directly on flexible substrates in near future. Here, we report the direct growth of various GaN nanostructures such as islands, thin films and nanorods on variety of flexible metal foils using laser-assisted molecular beam epitaxy (LMBE) technique and studied their structural and optical properties. Cubic and wurtzite mixed-phase GaN thin film and island structures have been obtained on the thin Cu and graphene/Cu metal foils under nitrogen-rich growth condition. Interestingly, the growth of high optical quality wurtzite GaN nanorods on bare and nitridated W foil is achieved at a low temperature of 600 °C. Vertically self-aligned GaN nanorods are successfully grown on flexible Ti metal foils at growth temperature of 650–700 °C by tuning the pre-nitridation condition of Ti foils. On the other hand, vertically well-oriented, high-density GaN nanorods have been achieved at 700 °C on bare Ta foil without any surface treatment. Raman spectroscopy, high-resolution X-ray diffraction and high-resolution transmission electron microscopy studies revealed the c-axis growth of high structural quality wurtzite GaN nanorods on these flexible metal foils. The photoluminescence spectroscopy measurements exhibit a near band edge emission around  ~3.4 eV with a full width at half maximum value of  ~100 meV for densely grown GaN nanorods. Our studies disclosed that various GaN nanostructures were grown directly on different flexible metal foils by tuning the surface treatment process by LMBE technique for developing futuristic flexible optoelectronics devices.

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Acknowledgements

The authors thank the director, NPL, for the constant encouragement and support. The authors are also grateful to Dr. N.D. Sharma, Dr. G. Gupta, Dr. K. Subhedar and Dr. M. Kaur of CSIR-NPL, Dr. B. S. Yadav of SSPL, New Delhi, and Dr. S. Ojha of IUAC, New Delhi, for their help in different sample characterizations. Authors would like to acknowledge the group members Mr. C. Ramesh and Mr. P. Tyagi for their contribution in carrying out this work.

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  1. CSIR- National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110012, India

    S. S. Kushvaha & M. Senthil Kumar

  2. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India

    S. S. Kushvaha & M. Senthil Kumar

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    Zishan Husain Khan

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Kushvaha, S.S., Senthil Kumar, M. (2021). Self-assembled Growth of GaN Nanostructures on Flexible Metal Foils by Laser Molecular Beam Epitaxy. In: Khan, Z.H. (eds) Emerging Trends in Nanotechnology. Springer, Singapore. https://doi.org/10.1007/978-981-15-9904-0_5

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