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Novel Nitride LED Technology

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III-Nitrides Light Emitting Diodes: Technology and Applications

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 306))

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Abstract

At present, the light efficiency of the high-power white LED has reached 250 lm/W in the industry. The light efficiency reported in the laboratory has exceeded 300 lm/W. The innovation of LED technology and application of LEDs have far exceeded expectations. However, the luminous efficiency of the traditional planar LED with InGaN/GaN multiple quantum well structure is difficult to rise significantly due to some inherent problems. At the same time, the light efficiency is still far away from the theoretical limit of 400 lm/W. In addition, with the demand of some special applications, some new LED technologies such as nanorod LEDs, quantum dot LEDs, polarized LEDs, etc., have been explored. The exploration of the growth, preparation and application of these new LED structures not only contribute to the research of basic physics but also to solve the bottleneck problem in the development of semiconductor lighting by improving the material and device performance and by approaching the theoretical limit of LED lighting. Thus, it has important research value.

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Author information

Authors and Affiliations

  1. The State Key Laboratory for Solid State Lighting, Beijing, China

    Jinmin Li

  2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China

    Jinmin Li

  3. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

    Jinmin Li

  4. The State Key Laboratory for Solid State Lighting, Beijing, China

    Junxi Wang

  5. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China

    Junxi Wang

  6. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

    Junxi Wang

  7. The State Key Laboratory for Solid State Lighting, Beijing, China

    Xiaoyan Yi

  8. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China

    Xiaoyan Yi

  9. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

    Xiaoyan Yi

  10. The State Key Laboratory for Solid State Lighting, Beijing, China

    Zhiqiang Liu

  11. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China

    Zhiqiang Liu

  12. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

    Zhiqiang Liu

  13. The State Key Laboratory for Solid State Lighting, Beijing, China

    Tongbo Wei

  14. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China

    Tongbo Wei

  15. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

    Tongbo Wei

  16. The State Key Laboratory for Solid State Lighting, Beijing, China

    Jianchang Yan

  17. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China

    Jianchang Yan

  18. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

    Jianchang Yan

  19. The State Key Laboratory for Solid State Lighting, Beijing, China

    Bin Xue

  20. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

    Bin Xue

Authors
  1. Jinmin Li
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  2. Junxi Wang
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  3. Xiaoyan Yi
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  4. Zhiqiang Liu
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Li, J. et al. (2020). Novel Nitride LED Technology. In: III-Nitrides Light Emitting Diodes: Technology and Applications. Springer Series in Materials Science, vol 306. Springer, Singapore. https://doi.org/10.1007/978-981-15-7949-3_12

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