Abstract
Traditional micro-electronics work by controlling the flow of electron charge through transistor switches. Spintronics, which exploits the spin degree of freedom of electron, can lead to devices that outstrip the performance of traditional semiconductor technology. The spin moment in magnetic nanostructures by virtue of their inherent non-volatility can potentially offer the opportunity of ultra-low power and high speed devices. This chapter describes proof-of-concept devices that utilize magnetic domain walls in nanowire network to perform logical operations. A magnetic reconfigurable logic device is discussed, whose operation is mediated via domain wall motion. The logical operation can be programmed at run-time and the whole booelan logic family, from simple NOT to complex operations such as NAND can be obtained. The second part of the chapter explores the feasibility of encoding logical bit within the internal state of domain wall, leading to mobile data bits. Simple single to double bits logical operations are demonstrated.
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Goolaup, S., Murapaka, C., Lew, W.S. (2021). Domain Wall Programmable Magnetic Logic. In: Lew, W.S., Lim, G.J., Dananjaya, P.A. (eds) Emerging Non-volatile Memory Technologies. Springer, Singapore. https://doi.org/10.1007/978-981-15-6912-8_7
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DOI: https://doi.org/10.1007/978-981-15-6912-8_7
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