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Circuit Design for Non-volatile Magnetic Memory

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Emerging Non-volatile Memory Technologies

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Abstract

High performance low power memory is a topmost requirement in advanced computing systems. Magnetic memory has been considered as a promising solution because of its performance and non-volatility. However, it has various design challenges such as small tunneling magnetoresistance (TMR) ratios and large variability that need to be tackled for reliable operation. This chapter will discuss those challenges and introduce state-of-the-art write and read techniques.

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Authors and Affiliations

  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore

    Tony Tae-Hyoung Kim

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  1. Tony Tae-Hyoung Kim
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Correspondence to Tony Tae-Hyoung Kim .

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Editors and Affiliations

  1. School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore

    Wen Siang Lew

  2. School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore

    Gerard Joseph Lim

  3. School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore

    Putu Andhita Dananjaya

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Kim, T.TH. (2021). Circuit Design for Non-volatile Magnetic Memory. In: Lew, W.S., Lim, G.J., Dananjaya, P.A. (eds) Emerging Non-volatile Memory Technologies. Springer, Singapore. https://doi.org/10.1007/978-981-15-6912-8_6

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